发明授权
- 专利标题: Magnetoresistive memory apparatus
- 专利标题(中): 磁阻存储装置
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申请号: US10788319申请日: 2004-03-01
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公开(公告)号: US06903400B2公开(公告)日: 2005-06-07
- 发明人: Hideyuki Kikuchi , Masashige Sato , Kazuo Kobayashi
- 申请人: Hideyuki Kikuchi , Masashige Sato , Kazuo Kobayashi
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Armstrong, Kratz, Quintos, Hanson & Brooks, LLP
- 优先权: JP2003-346616 20031006
- 主分类号: H01L27/105
- IPC分类号: H01L27/105 ; H01L21/8246 ; H01L21/8247 ; H01L27/22 ; H01L29/76 ; H01L31/062 ; H01L43/08
摘要:
A magnetoresistive memory apparatus with a semiconductor substrate having a plurality of intersecting, non-contacting word lines and bit lines constituting a matrix, and a plurality of ferromagnetic tunnel junction devices located adjacent each intersection of the plurality of lines, each junction device having, disposed one upon another via insulating layers, free layers having variable magnetization directions and fixed magnetization layers having fixed magnetization directions, with magnetized information being written to the memory device at an intersection selected by magnetization electric currents supplied to the lines, the magnetized information read out by detecting the resistance variance of electric currents flowing through the memory device due to the tunnel effect. The plurality of junction devices deviate from the intersections of the plurality of lines, and between the lines are non-contacting free layer extended portions being extensions from only the free layer, to shorten the interval there between.
公开/授权文献
- US20050072997A1 MAGNETORESISTIVE MEMORY APPARATUS 公开/授权日:2005-04-07