发明授权
US06903826B2 Method and apparatus for determining endpoint of semiconductor element fabricating process
有权
用于确定半导体元件制造工艺的端点的方法和装置
- 专利标题： Method and apparatus for determining endpoint of semiconductor element fabricating process
- 专利标题（中）： 用于确定半导体元件制造工艺的端点的方法和装置
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申请号： US09946504申请日： 2001-09-06
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公开(公告)号： US06903826B2公开(公告)日： 2005-06-07
- 发明人: Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
- 申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP
- 主分类号： G01B11/06
- IPC分类号： G01B11/06 ; G01B9/02
摘要：
Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.