-
1.发明授权Method and apparatus for determining endpoint of semiconductor element fabricating process 有权用于确定半导体元件制造工艺的端点的方法和装置公开(公告)号：US06903826B2
公开(公告)日：2005-06-07
申请号：US09946504
申请日：2001-09-06
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译： 对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。 这些标准模式使用波长作为参数。 然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。 具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。 基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。
-
2.发明授权公开(公告)号：US07126697B2
公开(公告)日：2006-10-24
申请号：US11340559
申请日：2006-01-27
IPC分类号： G01B11/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
-
3.发明申请Method and apparatus for determining endpoint of semiconductor element fabricating process 有权用于确定半导体元件制造工艺的端点的方法和装置公开(公告)号：US20060132798A1
公开(公告)日：2006-06-22
申请号：US11340559
申请日：2006-01-27
IPC分类号： G01B11/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译： 对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。 这些标准模式使用波长作为参数。 然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。 具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。 基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。
-
公开(公告)号：US07009715B2
公开(公告)日：2006-03-07
申请号：US10978412
申请日：2004-11-02
IPC分类号： G01B9/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
-
5.发明申请Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed 有权用于确定半导体元件制造工艺的端点的方法和装置以及用于处理待处理部件的方法和装置公开(公告)号：US20050062982A1
公开(公告)日：2005-03-24
申请号：US10978412
申请日：2004-11-02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译： 对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。 这些标准模式使用波长作为参数。 然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。 具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。 基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。
-
6.发明授权Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法公开(公告)号：US07230720B2
公开(公告)日：2007-06-12
申请号：US11256967
申请日：2005-10-25
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
摘要翻译： 干涉光的微分值的标准图案相对于待处理的第一部件的预定膜厚设定。 标准图案使用波长作为参数。 然后，对于多个波长中的每一个测量与第一构件正好相同的待处理的第二构件的干涉光的强度，以获得所测量的干涉光的差分值的实际图案 强度。 实际图案也使用波长作为参数。 然后，根据标准图案和差分值的实际图案获得第二构件的膜厚度。
-
7.发明申请Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法公开(公告)号：US20050018207A1
公开(公告)日：2005-01-27
申请号：US10918367
申请日：2004-08-16
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
摘要翻译： 干涉光的微分值的标准图案相对于待处理的第一部件的预定膜厚设定。 标准图案使用波长作为参数。 然后，对于多个波长中的每一个测量与第一构件正好相同的待处理的第二构件的干涉光的强度，以获得所测量的干涉光的差分值的实际图案 强度。 实际图案也使用波长作为参数。 然后，根据标准图案和差分值的实际图案获得第二构件的膜厚度。
-
公开(公告)号：US20060039008A1
公开(公告)日：2006-02-23
申请号：US11256967
申请日：2005-10-25
IPC分类号： G01B11/02
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
-
9.发明授权Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法公开(公告)号：US07411684B2
公开(公告)日：2008-08-12
申请号：US11759536
申请日：2007-06-07
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A system including: a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including: a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed; a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed; a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and a unit for determining a processed amount of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.
摘要翻译： 一种系统，包括：用于测量待处理部件的膜厚度的膜厚度测量装置，包括：差分波形图案数据库，用于保持由多个波长中的每一个的干涉光的时间差分值组成的标准图案， 相对于要处理的第一构件的膜厚度; 用于测量待处理的第二构件的多个波长中的每一个的干涉光的强度的单元; 用于获得由测量的干涉光强度的时间差值组成的实际图案的单元; 以及通过使用多个波长的接收干涉光中的第二波长的接收干涉光的强度的差分值的零交叉点的图案来确定胶片的处理量的单元。
-
10.发明申请FILM THICKNESS MEASURING METHOD OF MEMBER TO BE PROCESSED USING EMISSION SPECTROSCOPY AND PROCESSING METHOD OF THE MEMBER USING THE MEASURING METHOD 有权使用发射光谱处理的成员的薄膜厚度测量方法和使用测量方法的成员的处理方法公开(公告)号：US20070229845A1
公开(公告)日：2007-10-04
申请号：US11759536
申请日：2007-06-07
IPC分类号： G01B9/02
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A system including: a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including: a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed; a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed; a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and a unit for determining a processed amount of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.
摘要翻译： 一种系统，包括：用于测量待处理部件的膜厚度的膜厚度测量装置，包括：差分波形图案数据库，用于保持由多个波长中的每一个的干涉光的时间差分值组成的标准图案， 相对于要处理的第一构件的膜厚度; 用于测量待处理的第二构件的多个波长中的每一个的干涉光的强度的单元; 用于获得由测量的干涉光强度的时间差值组成的实际图案的单元; 以及通过使用多个波长的接收干涉光中的第二波长的接收干涉光的强度的差分值的零交叉点的图案来确定胶片的处理量的单元。
-
-
-
-
-
-
-
-
-
搜索结果
77 条记录 (耗时 0.023 秒)