发明授权
US06905888B2 Magnetic memory element having controlled nucleation site in data layer
有权
磁记忆元件在数据层中具有受控的成核位点
- 专利标题： Magnetic memory element having controlled nucleation site in data layer
- 专利标题（中）： 磁记忆元件在数据层中具有受控的成核位点
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申请号： US10676414申请日： 2003-09-30
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公开(公告)号： US06905888B2公开(公告)日： 2005-06-14
- 发明人: Janice H. Nickel , Manoj Bhattacharyya
- 申请人： Janice H. Nickel , Manoj Bhattacharyya
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C11/16 ; H01L21/8246 ; H01L27/105 ; H01L43/08 ; H01L21/00
摘要：
A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. In some embodiments, the nucleation site may be a divot in the data layer or a protrusion from the data layer. A Magnetic Random Access Memory (“MRAM”) device may include an array of magnetic memory elements having data layers with controlled nucleation sites.
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