发明授权
- 专利标题： Magnetic memory structure
- 专利标题（中）： 磁记忆体结构
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申请号： US10624175申请日： 2003-07-22
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公开(公告)号： US06906941B2公开(公告)日： 2005-06-14
- 发明人: Lung Tran , Thomas C. Anthony
- 申请人： Lung Tran , Thomas C. Anthony
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 代理商 Brian R. Short
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C11/16 ; G11C5/08
摘要：
The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.
公开/授权文献
- US20050018475A1 Magnetic memory structure 公开/授权日：2005-01-27
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