发明授权
- 专利标题: Analysis methods of leakage current luminescence in CMOS circuits
- 专利标题(中): CMOS电路中漏电流发光的分析方法
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申请号: US10669305申请日: 2003-09-24
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公开(公告)号: US06909295B2公开(公告)日: 2005-06-21
- 发明人: Stanislav V. Polonsky , Alan J. Weger , Moyra K. Mc Manus
- 申请人: Stanislav V. Polonsky , Alan J. Weger , Moyra K. Mc Manus
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser
- 代理商 Thu. A. Dang
- 主分类号: G01R31/02
- IPC分类号: G01R31/02 ; G01R31/26 ; G01R31/303 ; G06F19/00 ; H01L21/00
摘要:
Disclosed are a method and system for analyzing leakage current luminescence in CMOS circuits. The method comprises the steps of collecting light emission data from each of a plurality of CMOS circuits, and separating the CMOS circuits into first and second groups. For the first group of CMOS circuits, the emission data from the CMOS circuits are analyzed, based on the presence or absence of leakage light from the CMOS circuits, to identify logic states for the CMOS circuits. For the second group of CMOS circuits, the emission data from the CMOS circuits are analyzed, based on modulation of the intensity of the light from the CMOS circuits, to determine values for given parameters of the circuits. These parameters may be, for example, temperature, cross-talk or power distribution noise.
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