发明授权
- 专利标题: Positive resist composition and patterning process
- 专利标题(中): 正抗蚀剂组成和图案化工艺
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申请号: US10737788申请日: 2003-12-18
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公开(公告)号: US06911292B2公开(公告)日: 2005-06-28
- 发明人: Tomoyoshi Furihata , Hideto Kato
- 申请人: Tomoyoshi Furihata , Hideto Kato
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: JP2002-369884 20021220
- 主分类号: G03F7/022
- IPC分类号: G03F7/022 ; C08F222/02 ; C08G8/28 ; G03F7/023 ; G03F7/033 ; G03F7/40 ; H01L21/027 ; H05K3/18 ; H05K3/24 ; G03F7/30
摘要:
A positive resist composition contains a novolak resin in which 3-27 mol % of the hydroxyl group hydrogens are substituted with 1,2-naphthoquinonediazidosulfonyl ester groups, a methyl vinyl ether-monoalkyl maleate copolymer and optionally, an alkali-soluble cellulose whose glucose ring substituent groups are substituted with organic groups at a specific rate. The composition is useful as a thick film photoresist which is subject to a plating step and offers many advantages including high sensitivity, perpendicular geometry, high resolution, and crack resistance during and after the plating step.
公开/授权文献
- US20040131964A1 Positive resist composition and patterning process 公开/授权日:2004-07-08
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