- 专利标题： Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
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申请号： US10665934申请日： 2003-09-19
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公开(公告)号： US06911399B2公开(公告)日： 2005-06-28
- 发明人: Wei Liu , David Mui
- 申请人： Wei Liu , David Mui
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Moser, Patterson & Sheridan, LLP.
- 代理商 Joseph Bach
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; G03F7/40 ; H01L21/027 ; H01L21/311 ; H01L21/302
摘要：
A method for trimming photoresist features on a semiconductor substrate in a processing system. The method utilizes a process gas mixture comprising a hydrocarbon gas, an oxygen gas and an inert gas. The critical dimension (CD) microloading of the dense and the isolated regions can be eliminated and the photoresist trimming rate can also be reduced to enable better critical dimension (CD) control.
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