Invention Grant
- Patent Title: Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
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Application No.: US10665934Application Date: 2003-09-19
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Publication No.: US06911399B2Publication Date: 2005-06-28
- Inventor: Wei Liu , David Mui
- Applicant: Wei Liu , David Mui
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser, Patterson & Sheridan, LLP.
- Agent Joseph Bach
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; G03F7/40 ; H01L21/027 ; H01L21/311 ; H01L21/302
Abstract:
A method for trimming photoresist features on a semiconductor substrate in a processing system. The method utilizes a process gas mixture comprising a hydrocarbon gas, an oxygen gas and an inert gas. The critical dimension (CD) microloading of the dense and the isolated regions can be eliminated and the photoresist trimming rate can also be reduced to enable better critical dimension (CD) control.
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