- 专利标题： Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same
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申请号： US10287905申请日： 2002-11-05
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公开(公告)号： US06911400B2公开(公告)日： 2005-06-28
- 发明人: Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
- 申请人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Ohlandt, Greeley, Ruggiero & Perle, L.L.P. IBM Corporation
- 代理商 Daniel P. Morris, Esq.
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; B32B3/00 ; G03F7/00 ; G03F7/16 ; G03F7/26 ; H01L21/31 ; H01L21/3105 ; H01L21/469
摘要：
A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.
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