- 专利标题: Semiconductor device and electronic device
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申请号: US10391746申请日: 2003-03-20
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公开(公告)号: US06911734B2公开(公告)日: 2005-06-28
- 发明人: Hiroshi Kikuchi , Norio Nakazato , Hideko Ando , Takashi Suga , Satoru Isomura , Takashi Kubo , Hiroyasu Sasaki , Masanori Fukuhara , Naotaka Tanaka , Fujiaki Nose
- 申请人: Hiroshi Kikuchi , Norio Nakazato , Hideko Ando , Takashi Suga , Satoru Isomura , Takashi Kubo , Hiroyasu Sasaki , Masanori Fukuhara , Naotaka Tanaka , Fujiaki Nose
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Reed Smith LLP
- 代理商 Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
- 优先权: JP2002-053222 20020228; JP2002-318936 20021031
- 主分类号: H01L23/66
- IPC分类号: H01L23/66 ; H05K1/02 ; H05K3/36 ; H01L23/34
摘要:
A high-frequency signal from a tape-shaped line section having a surface layer signal lead and surface layer GND lead disposed on both sides thereof is directly inputted to a semiconductor chip via a signal surface layer wiring of a package substrate and through solder bump electrodes. Alternatively, a high-frequency signal from the semiconductor chip is outputted to the outside via the tape-shaped line section in reverse. Owing to the transmission of the high-frequency signal by only a microstrip line at the whole surface layer of the package substrate, the high-frequency signal can be transmitted by only the microstrip line at the surface layer without through vias or the like. Accordingly, the high-frequency signal can be transmitted without a loss in frequency characteristic, and a high-quality high-frequency signal can be transmitted with a reduction in loss at high-frequency transmission.
公开/授权文献
- US20030218238A1 Semiconductor device and electronic device 公开/授权日:2003-11-27