发明授权
US06913968B2 Method and structure for vertical DRAM devices with self-aligned upper trench shaping
失效
具有自对准上沟槽成形的垂直DRAM器件的方法和结构
- 专利标题： Method and structure for vertical DRAM devices with self-aligned upper trench shaping
- 专利标题（中）： 具有自对准上沟槽成形的垂直DRAM器件的方法和结构
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申请号： US10604565申请日： 2003-07-30
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公开(公告)号： US06913968B2公开(公告)日： 2005-07-05
- 发明人: Kangguo Cheng , Ramachandra Divakaruni , C. Y. Sung
- 申请人： Kangguo Cheng , Ramachandra Divakaruni , C. Y. Sung
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 James J. Cioffi
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/336 ; H01L21/8242 ; H01L27/02
摘要：
A method and structure for a memory storage cell in a semiconductor substrate includes forming a dopant source material over a lower portion of a deep trench formed in the substrate. An upper portion of the trench is shaped to a generally rectangular configuration, and the dopant source material is annealed so as to form a buried plate of a trench capacitor. The buried plate is self aligned to the shaped upper portion of the trench.
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