发明授权
- 专利标题: Method for forming shallow trench isolation structure
- 专利标题(中): 浅沟槽隔离结构的形成方法
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申请号: US10788183申请日: 2004-02-25
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公开(公告)号: US06913978B1公开(公告)日: 2005-07-05
- 发明人: Neng-Kuo Chen , Hsiu-Chuan Chu , Chih-An Huang , Hsiao-Ling Lu , Teng-Chun Tsai
- 申请人: Neng-Kuo Chen , Hsiu-Chuan Chu , Chih-An Huang , Hsiao-Ling Lu , Teng-Chun Tsai
- 申请人地址: TW Hsinchu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Hsinchu
- 代理机构: J.C. Patents
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/762
摘要:
A method of fabricating a shallow trench isolation structure is disclosed. On a substrate, a pad oxide layer and a mask layer are successively formed. The pad oxide layer, the mask layer and a portion of the substrate are patterned to form a trench. After performing a rapid wet thermal process, a liner layer is formed on the exposed surface of the substrate, including the exposed silicon surface of the substrate in the trench and sidewalls and the surface of the mask layer. An oxide layer is deposited over the trench and the substrate and fills the trench. A planarization process is performed until the mask layer is exposed. The mask layer and the pad oxide layer are removed to complete the shallow trench isolation structure.