公开(公告)号：US06913978B1

公开(公告)日：2005-07-05

申请号：US10788183

申请日：2004-02-25

申请人： Neng-Kuo Chen ,  Hsiu-Chuan Chu ,  Chih-An Huang ,  Hsiao-Ling Lu ,  Teng-Chun Tsai

发明人： Neng-Kuo Chen ,  Hsiu-Chuan Chu ,  Chih-An Huang ,  Hsiao-Ling Lu ,  Teng-Chun Tsai

IPC分类号： H01L21/336 ,  H01L21/762

CPC分类号： H01L21/76235 ,  H01L21/76232

摘要： A method of fabricating a shallow trench isolation structure is disclosed. On a substrate, a pad oxide layer and a mask layer are successively formed. The pad oxide layer, the mask layer and a portion of the substrate are patterned to form a trench. After performing a rapid wet thermal process, a liner layer is formed on the exposed surface of the substrate, including the exposed silicon surface of the substrate in the trench and sidewalls and the surface of the mask layer. An oxide layer is deposited over the trench and the substrate and fills the trench. A planarization process is performed until the mask layer is exposed. The mask layer and the pad oxide layer are removed to complete the shallow trench isolation structure.

摘要翻译： 公开了一种制造浅沟槽隔离结构的方法。 在衬底上，依次形成衬垫氧化物层和掩模层。 衬垫氧化物层，掩模层和衬底的一部分被图案化以形成沟槽。 在进行快速湿热处理之后，在衬底的暴露表面上形成衬垫层，包括在沟槽中的衬底的暴露的硅表面以及掩模层的侧壁和表面。 在沟槽和衬底上沉积氧化物层并填充沟槽。 进行平坦化处理，直到掩模层被曝光。 去除掩模层和焊盘氧化物层以完成浅沟槽隔离结构。

公开(公告)号：US20050074946A1

公开(公告)日：2005-04-07

申请号：US10605478

申请日：2003-10-02

申请人： Hsiu-Chuan Chu ,  Chih-An Huang ,  Teng-Chun Tsai ,  Neng-Kuo Chen

发明人： Hsiu-Chuan Chu ,  Chih-An Huang ,  Teng-Chun Tsai ,  Neng-Kuo Chen

IPC分类号： H01L21/762 ,  H01L21/76

CPC分类号： H01L21/76224

摘要： A silicon oxide gap-filling process is described, wherein a CVD process having an etching effect is performed to fill up a trench with silicon oxide. The reaction gases used in the CVD process include deposition gases and He/H2 mixed gas as a sputtering-etching gas, wherein the percentage of the He/H2 mixed gas in the total reaction gases is raised with the increase of the aspect ratio of the trench.

摘要翻译： 描述了氧化硅间隙填充工艺，其中执行具有蚀刻效果的CVD工艺以用氧化硅填充沟槽。 CVD工艺中使用的反应气体包括沉积气体和He / H 2混合气体作为溅射蚀刻气体，其中总反应气体中He / H 2混合气体的百分比随着纵横比的增加而升高 沟。

公开(公告)号：US20050159007A1

公开(公告)日：2005-07-21

申请号：US10761993

申请日：2004-01-21

申请人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Hsiu-Chuan Chu ,  Chih-An Huang

发明人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Hsiu-Chuan Chu ,  Chih-An Huang

IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/762

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31612 ,  H01L21/76232

摘要： A manufacturing method of shallow trench isolation (STI) structure is described. A substrate is provided, wherein a patterned pad oxide layer and a mask layer are formed on the substrate, and at least a trench is formed in the substrate, wherein the trench is formed by exposing a portion of the pad oxide layer and the mask layer. Then, a liner layer on a surface of the trench is formed. A high density plasma chemical vapor deposition (HDP-CVD) process is performed to form an isolation layer on the substrate and over the trench, wherein the trench is at least filled with the isolation layer. The HDP-CVD process includes a first stage process and a second stage process. The bias power of the second stage process is larger than the bias power of the first stage process. Thereafter, the isolation layer over the trench, the mask layer and the pad oxide layer are removed sequentially.

摘要翻译： 描述了浅沟槽隔离（STI）结构的制造方法。 提供了一种衬底，其中在衬底上形成图案化衬垫氧化物层和掩模层，并且至少在衬底中形成沟槽，其中通过使衬垫氧化物层和掩模层的一部分暴露而形成沟槽 。 然后，形成沟槽表面上的衬垫层。 执行高密度等离子体化学气相沉积（HDP-CVD）工艺以在衬底上和沟槽上形成隔离层，其中沟槽至少填充有隔离层。 HDP-CVD工艺包括第一阶段工艺和第二阶段工艺。 第二级过程的偏置功率大于第一级过程的偏置功率。 此后，顺序地除去沟槽上的隔离层，掩模层和焊盘氧化物层。

公开(公告)号：US06989337B2

公开(公告)日：2006-01-24

申请号：US10605478

申请日：2003-10-02

申请人： Hsiu-Chuan Chu ,  Chih-An Huang ,  Teng-Chun Tsai ,  Neng-Kuo Chen

发明人： Hsiu-Chuan Chu ,  Chih-An Huang ,  Teng-Chun Tsai ,  Neng-Kuo Chen

IPC分类号： H01L21/31

CPC分类号： H01L21/76224

摘要： A silicon oxide gap-filling process is described, wherein a CVD process having an etching effect is performed to fill up a trench with silicon oxide. The reaction gases used in the CVD process include deposition gases and He/H2 mixed gas as a sputtering-etching gas, wherein the percentage of the He/H2 mixed gas in the total reaction gases is raised with the increase of the aspect ratio of the trench.

摘要翻译： 描述了氧化硅间隙填充工艺，其中执行具有蚀刻效果的CVD工艺以用氧化硅填充沟槽。 在CVD工艺中使用的反应气体包括作为溅射蚀刻气体的沉积气体和He / H 2 H 2混合气体，其中He / H 2 H 2混合气体的百分比 在总反应中随着沟槽纵横比的增加气体的升高。

公开(公告)号：US20080173118A1

公开(公告)日：2008-07-24

申请号：US11624245

申请日：2007-01-18

申请人： Jhih-Chao Chen ,  Shen-Fa Ho ,  Ting-Shun Wu ,  Chih-An Huang

发明人： Jhih-Chao Chen ,  Shen-Fa Ho ,  Ting-Shun Wu ,  Chih-An Huang

IPC分类号： F16H61/00

CPC分类号： F16H61/18 ,  F16H61/22 ,  Y10T74/19251 ,  Y10T74/20098 ,  Y10T74/2011 ,  Y10T74/20116

摘要： This invention discloses a gearshift lock protection mechanism comprising a gearbox, a gearshift module and a gearshift lock controller. The gearshift module comprises a control panel and a gearshift leading wire set. The control panel is combined with a gearbox shaft of the gearbox, shifting gears of the gearbox by using the gearshift leading wire set to control the control panel and the gearbox shaft, wherein, a plurality of gear ranges positioning holes which are located on the surface of the control panel, the gearshift lock controller comprises a control valve which is linked to a gearshift poisoning leading wire, a positioning terminal located at the end of the gearshift positioning leading wire which is in one of the gear ranges positioning holes determined by the control valve, such that it can lock the gear in a particular range and eliminate the gearbox damage.

摘要翻译： 本发明公开了一种换档锁定保护机构，包括齿轮箱，换档模块和换档锁定控制器。 换档模块包括控制面板和换档导线组。 控制面板与齿轮箱的齿轮箱轴组合，通过使用换档导线组来移动齿轮箱，以控制控制面板和齿轮箱轴，其中，多个齿轮范围定位孔，位于表面 换档锁定控制器包括控制阀，该控制阀连接到变速箱中毒导线，定位端子位于换档定位导线的末端，该定位导线位于由控制器确定的齿轮范围定位孔之一中 阀门，使其可以在特定范围内锁定齿轮并消除变速箱损坏。

公开(公告)号：US07628092B2

公开(公告)日：2009-12-08

申请号：US11624245

申请日：2007-01-18

申请人： Jhih-Chao Chen ,  Shen-Fa Ho ,  Ting-Shun Wu ,  Chih-An Huang

发明人： Jhih-Chao Chen ,  Shen-Fa Ho ,  Ting-Shun Wu ,  Chih-An Huang

IPC分类号： B60K20/00

CPC分类号： F16H61/18 ,  F16H61/22 ,  Y10T74/19251 ,  Y10T74/20098 ,  Y10T74/2011 ,  Y10T74/20116

摘要： Disclosed herein is a gearshift lock protection mechanism including a gearbox, a gearshift module and a gearshift lock controller. The gearshift module includes a control panel and a gearshift leading wire set. The control panel is combined with a gearbox shaft of the gearbox, shifting gears of the gearbox by using the gearshift leading wire set to control the control panel and the gearbox shaft. Furthermore, a plurality of gear ranges positioning holes are located on the surface of the control panel. The gearshift lock controller includes a control valve which is linked to a gearshift poisoning leading wire, a positioning terminal located at the end of the gearshift positioning leading wire which is in one of the gear ranges positioning holes determined by the control valve, such that it can lock the gear in a particular range and eliminate the gearbox damage.

摘要翻译： 这里公开了一种换档锁定保护机构，其包括齿轮箱，换档模块和换档锁定控制器。 换挡模块包括一个控制面板和一个换档导线组。 控制面板与齿轮箱的齿轮箱轴组合，通过使用变速箱导线组来控制变速箱齿轮和变速箱轴。 此外，多个齿轮范围定位孔位于控制面板的表面上。 变速锁定控制器包括控制阀，该控制阀连接到变速箱中毒引导线上，定位端子位于换档定位引线的端部，该定位端子位于由控制阀确定的齿轮范围定位孔之一中，使得其 可以将齿轮锁定在特定的范围内，并消除齿轮箱损坏。

公开(公告)号：US06521300B1

公开(公告)日：2003-02-18

申请号：US09682307

申请日：2001-08-16

申请人： Tsung-Tang Hsieh ,  Cheng-Yuan Tsai ,  Hsin-Chang Wu ,  Chih-An Huang

发明人： Tsung-Tang Hsieh ,  Cheng-Yuan Tsai ,  Hsin-Chang Wu ,  Chih-An Huang

IPC分类号： H05H124

CPC分类号： H01L21/76801 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/312 ,  H01L21/314 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76829 ,  H01L23/53295

摘要： A method of coating an organic polymeric low-k dielectric layer starts by depositing a protective layer composed of silicon nitride (SiN) or silicon carbide (SiC) on a substrate. A hydrophilic surface is produced across a top surface of the protective layer by performing a fast surface treatment that subjects the surface to an oxygen-containing plasma at a pre-selected low radio frequency power. An adhesion promoter coating layer is formed over the top surface of the protective layer. The coating layer has promoter molecules, each promoter molecule having at least one hydrophobic group and one hydrophilic group. The low-k dielectric layer is spin-on coated onto the coating layer. Formation of the hydrophilic surface alters an orientation of the adhesion promoter molecules to facilitate the hydrophilic group of each of the adhesion promoter molecules facing the hydrophilic surface while the hydrophobic group of the adhesion promoter molecules faces the low-k dielectric layer.

摘要翻译： 通过在衬底上沉积由氮化硅（SiN）或碳化硅（SiC）组成的保护层，开始涂覆有机聚合物低k电介质层的方法。 通过执行快速表面处理，以预选的低射频功率使表面进入含氧等离子体，跨越保护层的顶表面产生亲水表面。 在保护层的顶表面上形成粘合促进剂涂层。 涂层具有促进剂分子，每个促进剂分子具有至少一个疏水基团和一个亲水基团。 将低k电介质层旋涂在涂层上。 亲水表面的形成改变了粘附促进剂分子的取向，以促进面向亲水表面的每个粘附促进剂分子的亲水基团，同时粘附促进剂分子的疏水基团面向低k电介质层。

公开(公告)号：US06764965B2

公开(公告)日：2004-07-20

申请号：US09931016

申请日：2001-08-17

申请人： Tsung-Tang Hsieh ,  Cheng-Yuan Tsai ,  Chih-An Huang

发明人： Tsung-Tang Hsieh ,  Cheng-Yuan Tsai ,  Chih-An Huang

IPC分类号： H01L2131

CPC分类号： H01L21/02304 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/76832

摘要： A method for improving the coating capability of low dielectric layer is disclosed. The method includes steps of an etching stop layer is deposited a semiconductor substrate, an adhesion promoter layer is spun-on the etching stop layer. The pre-wetting process being performed on the adhesion promoter layer to enhance the coating capability of the low-k dielectric layer, and thus improve the coating quality through the pre-wetting process of baked adhesion promoter layer before the low-k dielectric layer is applied.

摘要翻译： 公开了一种改善低介电层涂层能力的方法。 该方法包括沉积半导体衬底的蚀刻停止层的步骤，在蚀刻停止层上旋涂粘合促进剂层。 在粘合促进剂层上进行预润湿工艺以增强低k介电层的涂布能力，从而通过在低k电介质层之前的烘烤粘附促进剂层的预润湿工艺来改善涂层质量 应用。