公开(公告)号：US06913978B1

公开(公告)日：2005-07-05

申请号：US10788183

申请日：2004-02-25

申请人： Neng-Kuo Chen ,  Hsiu-Chuan Chu ,  Chih-An Huang ,  Hsiao-Ling Lu ,  Teng-Chun Tsai

发明人： Neng-Kuo Chen ,  Hsiu-Chuan Chu ,  Chih-An Huang ,  Hsiao-Ling Lu ,  Teng-Chun Tsai

IPC分类号： H01L21/336 ,  H01L21/762

CPC分类号： H01L21/76235 ,  H01L21/76232

摘要： A method of fabricating a shallow trench isolation structure is disclosed. On a substrate, a pad oxide layer and a mask layer are successively formed. The pad oxide layer, the mask layer and a portion of the substrate are patterned to form a trench. After performing a rapid wet thermal process, a liner layer is formed on the exposed surface of the substrate, including the exposed silicon surface of the substrate in the trench and sidewalls and the surface of the mask layer. An oxide layer is deposited over the trench and the substrate and fills the trench. A planarization process is performed until the mask layer is exposed. The mask layer and the pad oxide layer are removed to complete the shallow trench isolation structure.

摘要翻译： 公开了一种制造浅沟槽隔离结构的方法。 在衬底上，依次形成衬垫氧化物层和掩模层。 衬垫氧化物层，掩模层和衬底的一部分被图案化以形成沟槽。 在进行快速湿热处理之后，在衬底的暴露表面上形成衬垫层，包括在沟槽中的衬底的暴露的硅表面以及掩模层的侧壁和表面。 在沟槽和衬底上沉积氧化物层并填充沟槽。 进行平坦化处理，直到掩模层被曝光。 去除掩模层和焊盘氧化物层以完成浅沟槽隔离结构。

公开(公告)号：US20050074946A1

公开(公告)日：2005-04-07

申请号：US10605478

申请日：2003-10-02

申请人： Hsiu-Chuan Chu ,  Chih-An Huang ,  Teng-Chun Tsai ,  Neng-Kuo Chen

发明人： Hsiu-Chuan Chu ,  Chih-An Huang ,  Teng-Chun Tsai ,  Neng-Kuo Chen

IPC分类号： H01L21/762 ,  H01L21/76

CPC分类号： H01L21/76224

摘要： A silicon oxide gap-filling process is described, wherein a CVD process having an etching effect is performed to fill up a trench with silicon oxide. The reaction gases used in the CVD process include deposition gases and He/H2 mixed gas as a sputtering-etching gas, wherein the percentage of the He/H2 mixed gas in the total reaction gases is raised with the increase of the aspect ratio of the trench.

摘要翻译： 描述了氧化硅间隙填充工艺，其中执行具有蚀刻效果的CVD工艺以用氧化硅填充沟槽。 CVD工艺中使用的反应气体包括沉积气体和He / H 2混合气体作为溅射蚀刻气体，其中总反应气体中He / H 2混合气体的百分比随着纵横比的增加而升高 沟。

公开(公告)号：US20050159007A1

公开(公告)日：2005-07-21

申请号：US10761993

申请日：2004-01-21

申请人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Hsiu-Chuan Chu ,  Chih-An Huang

发明人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Hsiu-Chuan Chu ,  Chih-An Huang

IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/762

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31612 ,  H01L21/76232

摘要： A manufacturing method of shallow trench isolation (STI) structure is described. A substrate is provided, wherein a patterned pad oxide layer and a mask layer are formed on the substrate, and at least a trench is formed in the substrate, wherein the trench is formed by exposing a portion of the pad oxide layer and the mask layer. Then, a liner layer on a surface of the trench is formed. A high density plasma chemical vapor deposition (HDP-CVD) process is performed to form an isolation layer on the substrate and over the trench, wherein the trench is at least filled with the isolation layer. The HDP-CVD process includes a first stage process and a second stage process. The bias power of the second stage process is larger than the bias power of the first stage process. Thereafter, the isolation layer over the trench, the mask layer and the pad oxide layer are removed sequentially.

摘要翻译： 描述了浅沟槽隔离（STI）结构的制造方法。 提供了一种衬底，其中在衬底上形成图案化衬垫氧化物层和掩模层，并且至少在衬底中形成沟槽，其中通过使衬垫氧化物层和掩模层的一部分暴露而形成沟槽 。 然后，形成沟槽表面上的衬垫层。 执行高密度等离子体化学气相沉积（HDP-CVD）工艺以在衬底上和沟槽上形成隔离层，其中沟槽至少填充有隔离层。 HDP-CVD工艺包括第一阶段工艺和第二阶段工艺。 第二级过程的偏置功率大于第一级过程的偏置功率。 此后，顺序地除去沟槽上的隔离层，掩模层和焊盘氧化物层。

公开(公告)号：US06989337B2

公开(公告)日：2006-01-24

申请号：US10605478

申请日：2003-10-02

申请人： Hsiu-Chuan Chu ,  Chih-An Huang ,  Teng-Chun Tsai ,  Neng-Kuo Chen

发明人： Hsiu-Chuan Chu ,  Chih-An Huang ,  Teng-Chun Tsai ,  Neng-Kuo Chen

IPC分类号： H01L21/31

CPC分类号： H01L21/76224

摘要： A silicon oxide gap-filling process is described, wherein a CVD process having an etching effect is performed to fill up a trench with silicon oxide. The reaction gases used in the CVD process include deposition gases and He/H2 mixed gas as a sputtering-etching gas, wherein the percentage of the He/H2 mixed gas in the total reaction gases is raised with the increase of the aspect ratio of the trench.

摘要翻译： 描述了氧化硅间隙填充工艺，其中执行具有蚀刻效果的CVD工艺以用氧化硅填充沟槽。 在CVD工艺中使用的反应气体包括作为溅射蚀刻气体的沉积气体和He / H 2 H 2混合气体，其中He / H 2 H 2混合气体的百分比 在总反应中随着沟槽纵横比的增加气体的升高。