发明授权
US06913996B2 Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring
有权
形成金属布线的方法和用于形成金属布线的半导体制造装置
- 专利标题： Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring
- 专利标题（中）： 形成金属布线的方法和用于形成金属布线的半导体制造装置
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申请号： US10181273申请日： 2001-11-13
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公开(公告)号： US06913996B2公开(公告)日： 2005-07-05
- 发明人: Hideaki Yamasaki , Mitsuhiro Tachibana , Kazuya Okubo , Kenji Suzuki , Yumiko Kawano
- 申请人： Hideaki Yamasaki , Mitsuhiro Tachibana , Kazuya Okubo , Kenji Suzuki , Yumiko Kawano
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Pillsbury Winthrop Shaw Pittman LLP
- 优先权： JP2000-351716 20001117
- 国际申请： PCT/JP01/09924 WO 20011113
- 国际公布： WO02/41379 WO 20020523
- 主分类号： C23C16/30
- IPC分类号： C23C16/30 ; H01L21/28 ; H01L21/285 ; H01L21/3205 ; H01L21/768 ; H01L23/52 ; H01L21/4763 ; H01L21/44
摘要：
A metal film forming method, includes the steps of (a) (s13, s15) supplying a plural kinds of ingredient gases to a base barrier film (3) in sequence, wherein at least one of the gases includes a metal, and (b) (s14, s16) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film (5) of the metal is formed on the base barrier film (3).
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