发明授权
- 专利标题： Method for semiconductor wafer etching
- 专利标题（中）： 半导体晶片蚀刻方法
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申请号： US10706624申请日： 2003-11-12
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公开(公告)号： US06914208B2公开(公告)日： 2005-07-05
- 发明人: Akira Shimizu , Kunitoshi Nanba
- 申请人： Akira Shimizu , Kunitoshi Nanba
- 申请人地址： JP Tokyo
- 专利权人： ASM Japan K.K.
- 当前专利权人： ASM Japan K.K.
- 当前专利权人地址： JP Tokyo
- 代理机构： Knobbe, Martens, Olson & Bear LLP
- 优先权： JP2001-056685 20010301
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/00 ; H01L21/3065 ; B23K10/00
摘要：
A batch-type etching method includes applying microwaves from the outside of a reaction chamber to semiconductor wafers after HF gas etching of the wafers to remove residual substances including H2O, CH3OH, CH3COOH and/or other by-products from surfaces of the wafers. Microwaves oscillate polar molecules of the substances and generate heat, thereby removing the substances.
公开/授权文献
- US20040105671A1 Method for semiconductor wafer etching 公开/授权日：2004-06-03
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