A novel bismuth compound having excellent vaporization characteristic and/or thermal stability, a process of producing the same and a process of producing a film in the film formation by the CVD process are disclosed. Bismuth compounds each represented by the following formula 1, 5 and 9, processes of producing the same, and processes of producing a film. In the formulae, R1 and R7 each represents a lower alkyl group; R2, R8, R12, and R13 each represents a lower alkyl group, a lower alkoxy group, or the like; m represents the number of the substituent R12 in the range of 0-5; n1, n2, and n3 respectively represent the number of the substituent R2, the number of the substituent R8, and the number of the substituent R13 each in the range of 0-4; and R3 to R6, R9 to R11, R14, and R15 each represents hydrogen, a lower alkyl group, or the like, provided that specific combinations of the substituents are excluded.