发明授权
- 专利标题： Semiconductor transistor using L-shaped spacer
- 专利标题（中）： 半导体晶体管采用L型间隔器
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申请号： US10728811申请日： 2003-12-08
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公开(公告)号： US06917085B2公开(公告)日： 2005-07-12
- 发明人: Geum-Jong Bae , Nae-In Lee , Hwa-Sung Rhee , Young-Gun Ko , Tae-Hee Choe , Sang-Su Kim
- 申请人： Geum-Jong Bae , Nae-In Lee , Hwa-Sung Rhee , Young-Gun Ko , Tae-Hee Choe , Sang-Su Kim
- 申请人地址： KR Kyungki-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Kyungki-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR2001-31030 20010602
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/78 ; H01L29/76
摘要：
The present invention provides a semiconductor transistor using an L-shaped spacer. The semiconductor transistor includes a gate pattern formed on a semiconductor substrate and an L-shaped third spacer formed beside the gate pattern and having a horizontal protruding portion. An L-shaped fourth spacer is formed between the third spacer and the gate pattern, and between the third spacer and the substrate. A high-concentration junction area is positioned in the substrate beyond the third spacer, and a low-concentration junction area is positioned under the horizontal protruding portion of the third spacer. A medium-concentration junction area is positioned between the high- and low-concentration junction areas.
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