Invention Grant
- Patent Title: Trilayered beam MEMS device and related methods
- Patent Title (中): 三层梁MEMS器件及相关方法
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Application No.: US10817270Application Date: 2004-04-02
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Publication No.: US06917086B2Publication Date: 2005-07-12
- Inventor: Shawn Jay Cunningham , Svetlana Tatic-Lucic
- Applicant: Shawn Jay Cunningham , Svetlana Tatic-Lucic
- Applicant Address: US CA Livermore US NC Cary
- Assignee: Turnstone Systems, Inc.,Wispry, Inc.
- Current Assignee: Turnstone Systems, Inc.,Wispry, Inc.
- Current Assignee Address: US CA Livermore US NC Cary
- Agency: Pillsbury Winthrop
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81B7/00 ; H01H1/04 ; H01H1/50 ; H01H59/00 ; H01H61/04 ; H01L21/302 ; H01L23/373 ; H01L23/522 ; H01L27/12 ; H01L29/86 ; H02N1/00 ; H02N10/00 ; H01L29/82 ; H01L21/00

Abstract:
Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.
Public/Granted literature
- US20040188785A1 Trilayered beam MEMS device and related methods Public/Granted day:2004-09-30
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