- 专利标题: Semiconductor device using high-speed sense amplifier
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申请号: US10671464申请日: 2003-09-29
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公开(公告)号: US06917552B2公开(公告)日: 2005-07-12
- 发明人: Riichiro Takemura , Tomonori Sekiguchi , Takeshi Sakata
- 申请人: Riichiro Takemura , Tomonori Sekiguchi , Takeshi Sakata
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corporation
- 当前专利权人: Renesas Technology Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Reed Smith LLP
- 代理商 Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
- 优先权: JP2002-058154 20020305
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C7/06 ; G11C11/4091 ; G11C11/4097
摘要:
Disclosed is a sense amplifier arrangement that achieves high-speed access and shorter cycle time when array voltage is lowered in a DRAM. In a TG clocking sense system to separate data lines between the array side and the sense amplifier side in an early stage of a sensing period, a restore amplifier RAP is added, which amplifies data lines on the array side by referring to the data in the sense amplifier, and the restore amplifier is driven by a voltage VDH higher than the array voltage VDL. As a result, high-speed sense operation of the TG clocking system is made compatible with high-speed restore operation of overdrive system, and it is possible to achieve high-speed access operation and shorter cycle time.
公开/授权文献
- US20040057305A1 Semiconductor device using high-speed sense amplifier 公开/授权日:2004-03-25
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