发明授权
US06917901B2 Contact hole profile and line edge width metrology for critical image control and feedback of lithographic focus
失效
接触孔轮廓和线边缘宽度测量用于关键图像控制和光刻焦点反馈
- 专利标题: Contact hole profile and line edge width metrology for critical image control and feedback of lithographic focus
- 专利标题(中): 接触孔轮廓和线边缘宽度测量用于关键图像控制和光刻焦点反馈
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申请号: US10079389申请日: 2002-02-20
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公开(公告)号: US06917901B2公开(公告)日: 2005-07-12
- 发明人: Reginald R. Bowley, Jr. , Vincent J. Carlos , James E. Doran , Stephen E. Knight , Robert K. Leidy , Keith J. Machia , Joseph E. Shaver , Dianne L. Sundling
- 申请人: Reginald R. Bowley, Jr. , Vincent J. Carlos , James E. Doran , Stephen E. Knight , Robert K. Leidy , Keith J. Machia , Joseph E. Shaver , Dianne L. Sundling
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser
- 代理商 William D. Sabo, Esq.
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G03F9/02 ; G03C5/00
摘要:
A method uses three dimensional feature metrology for implementation of critical image control and feedback of lithographic focus and x/y tilt. The method is for measuring 3 dimensional profile changes in a photo sensitive film and feeding back compensatory exposure tool focus corrections to maintain a stable lithographic process. The measured focus change from the optimal tool focus offset is monitored directly on the critical product images for both contact hole and line images. Z Focus corrections and x/y tilt corrections are fed back independently of dose to maintain critical dimension (CD) control thereby achieving improved semiconductor wafer printing. Additionally, the method can be used to diagnose problems with the focusing system by measuring the relationship between line edge width and barometric pressure.