发明授权
US06919592B2 Electromechanical memory array using nanotube ribbons and method for making same
有权
使用纳米管带的机电存储器阵列及其制造方法
- 专利标题: Electromechanical memory array using nanotube ribbons and method for making same
- 专利标题(中): 使用纳米管带的机电存储器阵列及其制造方法
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申请号: US09915093申请日: 2001-07-25
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公开(公告)号: US06919592B2公开(公告)日: 2005-07-19
- 发明人: Brent M. Segal , Darren K. Brock , Thomas Rueckes
- 申请人: Brent M. Segal , Darren K. Brock , Thomas Rueckes
- 申请人地址: US MA Woburn
- 专利权人: Nantero, Inc.
- 当前专利权人: Nantero, Inc.
- 当前专利权人地址: US MA Woburn
- 代理机构: Hale and Dorr LLP
- 主分类号: B82B1/00
- IPC分类号: B82B1/00 ; B81B3/00 ; B82B3/00 ; G11C13/02 ; G11C23/00 ; H01H59/00 ; H01L21/768 ; H01L27/10 ; H01L29/06 ; H01L29/73
摘要:
Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.
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