发明授权
- 专利标题： Thin film transistor and fabricating method thereof
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US10605403申请日： 2003-09-29
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公开(公告)号： US06921698B2公开(公告)日： 2005-07-26
- 发明人: Yu-Chou Lee , Wen-Kuang Tsao
- 申请人： Yu-Chou Lee , Wen-Kuang Tsao
- 申请人地址： TW Taipei
- 专利权人： Chunghwa Picture Tubes, Ltd.
- 当前专利权人： Chunghwa Picture Tubes, Ltd.
- 当前专利权人地址： TW Taipei
- 代理机构： Jianq Chyun IP Office
- 优先权： TW92118974A 20030711
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/49 ; H01L29/786 ; H01L29/76
摘要：
A method for fabricating a thin film transistor (TFT) is described. A MoNb gate is formed on a substrate, and an insulating layer is formed on the substrate covering the gate. A channel layer is formed on the insulating layer above the gate, and a source/drain is formed on the channel layer to constitute a TFT. Since the gate is constituted of a MoNb layer, the contact resistance thereof can be reduced.
公开/授权文献
- US20050006645A1 [THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF] 公开/授权日：2005-01-13
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