Invention Grant
- Patent Title: IGBT with a Schottky barrier diode
- Patent Title (中): 具有肖特基势垒二极管的IGBT
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Application No.: US10689058Application Date: 2003-10-21
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Publication No.: US06921958B2Publication Date: 2005-07-26
- Inventor: Yukio Yasuda
- Applicant: Yukio Yasuda
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, MClelland, Maier & Neustadt, P.C.
- Priority: JP2002-362133 20021213
- Main IPC: H01L27/04
- IPC: H01L27/04 ; H01L21/822 ; H01L21/8234 ; H01L27/06 ; H01L27/07 ; H01L27/088 ; H01L29/78 ; H01L31/0328 ; H03K17/04 ; H03K17/0812 ; H01L27/95
Abstract:
A semiconductor device which IGBT (Z1) and a control circuit (B1) for driving the IGBT (Z1) are formed on the same semiconductor substrate by using a junction isolation technology, includes an input terminal (P1) for inputting a drive signal of the IGBT (Z1), a Schottky barrier diode (D2) having an anode connected to the input terminal (P1) and a cathode connected to an input terminal (B11) of the control circuit (B1), and a p-channel MOSFET (T1) for shorting both ends of the Schottky barrier diode (D2) when the voltage of the drive signal input to the input terminal (P1) is higher than a predetermined voltage, thereby latch-up of the parasitic element is prevented and a transmission loss of the input signal can be reduced.
Public/Granted literature
- US20040113172A1 Semiconductor device Public/Granted day:2004-06-17
Information query
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