发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10743006申请日： 2003-12-23
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公开(公告)号： US06924518B2公开(公告)日： 2005-08-02
- 发明人: Toshihiko Iinuma , Ichiro Mizushima , Mitsuaki Izuha , Kiyotaka Miyano , Kyoichi Suguro
- 申请人： Toshihiko Iinuma , Ichiro Mizushima , Mitsuaki Izuha , Kiyotaka Miyano , Kyoichi Suguro
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2003-273603 20030711
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L29/165 ; H01L29/417 ; H01L29/423 ; H01L29/49 ; H01L29/78 ; H01L29/80
摘要：
There is disclosed is a semiconductor device which comprises a semiconductor substrate, isolation regions formed within the semiconductor substrate to define the active region, a pair of impurity diffusion regions formed within the element region in a manner to have surfaces elevated from the isolation region, a SiGe film formed on an upper surface of the impurity diffusion region so as to cover partly the side surface of the impurity diffusion region, a Ge concentration in the SiGe film being higher at a lower surface of the SiGe film than at an upper surface of the SiGe film, a metal silicide layer formed on the SiGe film, and a gate electrode formed in the active region of the semiconductor substrate with a gate insulating film interposed therebetween and having a sidewall insulating film formed on the side surface.
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