发明授权
US06927117B2 Method for integration of silicide contacts and silicide gate metals
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硅化物触点和硅化物栅极金属的集成方法
- 专利标题： Method for integration of silicide contacts and silicide gate metals
- 专利标题（中）： 硅化物触点和硅化物栅极金属的集成方法
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申请号： US10725851申请日： 2003-12-02
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公开(公告)号： US06927117B2公开(公告)日： 2005-08-09
- 发明人: Cyril Cabral, Jr. , Jakub T. Kedzierski , Victor Ku , Christian Lavoie , Vijay Narayanan , An L. Steegen
- 申请人： Cyril Cabral, Jr. , Jakub T. Kedzierski , Victor Ku , Christian Lavoie , Vijay Narayanan , An L. Steegen
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser
- 代理商 Robert M. Trepp, Esq.
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L21/8238 ; H01L27/092 ; H01L29/417 ; H01L29/423 ; H01L29/49 ; H01L29/78
摘要：
A CMOS silicide metal integration scheme that allows for the incorporation of silicide contacts (S/D and gates) and metal silicide gates using a self-aligned process (salicide) as well as one or more lithography steps is provided. The integration scheme of the present invention minimizes the complexity and cost associated with fabricating a CMOS structure containing silicide contacts and silicide gate metals.
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