Invention Grant
- Patent Title: Method for fabricating a bipolar transistor base
- Patent Title (中): 双极晶体管基极的制造方法
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Application No.: US10225586Application Date: 2002-08-21
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Publication No.: US06927140B2Publication Date: 2005-08-09
- Inventor: Ravindra Soman , Anand Murthy
- Applicant: Ravindra Soman , Anand Murthy
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/205
- IPC: H01L21/205 ; H01L21/331 ; H01L29/10 ; H01L21/8222
Abstract:
A method for forming a base of a bipolar transistor. A narrow base is formed using a flash of boron doping gas in a reaction chamber to create a narrow base with high boron concentration. This method allows for reliable formation of a base with high boron concentration while maintaining manageability in controlling deposition of other materials in a substrate.
Public/Granted literature
- US20040048439A1 Method for fabricating a bipolar transistor base Public/Granted day:2004-03-11
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