发明授权
- 专利标题： Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed
- 专利标题（中）： 制造半导体器件和集成电路电容器的方法，由此抑制金属层的热氧化的表面形态的退化
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申请号： US10690763申请日： 2003-10-22
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公开(公告)号： US06927166B2公开(公告)日： 2005-08-09
- 发明人: Eun-ae Chung , Doo-sup Hwang , Cha-young Yoo
- 申请人： Eun-ae Chung , Doo-sup Hwang , Cha-young Yoo
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR2001-18961 20010410
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/02 ; H01L21/316 ; H01L21/00 ; H01L21/44
摘要：
A method of manufacturing a semiconductor device having a metal layer is provided in which variation of surface morphology resulting from thermal oxidation is suppressed. The metal layer is pretreated at a first temperature so that an upper surface of the metal layer is changed into a mixed phase of metal and oxygen and becomes substantially resistant to further oxidation during a subsequent heating at a higher temperature in an oxygen atmosphere.
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