Invention Grant
- Patent Title: Method to form a corrugated structure for enhanced capacitance
- Patent Title (中): 形成用于增强电容的波纹结构的方法
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Application No.: US09921423Application Date: 2001-08-02
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Publication No.: US06927445B2Publication Date: 2005-08-09
- Inventor: Randhir P. S. Thakur , Gordon Haller , Kirk D. Prall
- Applicant: Randhir P. S. Thakur , Gordon Haller , Kirk D. Prall
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/76 ; H01L29/94
Abstract:
A method of forming a corrugated capacitor on a semiconductor component. The method of forming the corrugated capacitor comprises a series of depositing alternating layers of doped silicon glass having different etch rates on a semiconductor component, covering the alternating layers with an etch-resistant material, and etching the alternating layers, thereby forming a capacitor structure having corrugated sides.
Public/Granted literature
- US20020093090A1 Method to form a corrugated structure for enhanced capacitance Public/Granted day:2002-07-18
Information query
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