- 专利标题： Multi-bit MRAM device with switching nucleation sites
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申请号： US10449261申请日： 2003-05-30
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公开(公告)号： US06927995B2公开(公告)日： 2005-08-09
- 发明人: Janice H. Nickel , Manoj K. Bhattacharyya
- 申请人： Janice H. Nickel , Manoj K. Bhattacharyya
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C11/16 ; G11C11/56 ; G11C11/00
摘要：
A magnetic memory cell includes a first magneto-resistive device and a second magneto-resistive device. The first magneto-resistive device has a first sense layer. The second magneto-resistive device is connected in series with the first magneto-resistive device. The second magneto-resistive device has a second sense layer. At least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.
公开/授权文献
- US20030209769A1 Multi-bit MRAM device with switching nucleation sites 公开/授权日：2003-11-13