发明授权
US06933191B2 Two-mask process for metal-insulator-metal capacitors and single mask process for thin film resistors
失效
金属绝缘体金属电容器的双掩模工艺和薄膜电阻器的单掩模工艺
- 专利标题： Two-mask process for metal-insulator-metal capacitors and single mask process for thin film resistors
- 专利标题（中）： 金属绝缘体金属电容器的双掩模工艺和薄膜电阻器的单掩模工艺
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申请号： US10605260申请日： 2003-09-18
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公开(公告)号： US06933191B2公开(公告)日： 2005-08-23
- 发明人: Glenn A. Biery , Zheng G. Chen , Timothy J. Dalton , Naftali E. Lustig
- 申请人： Glenn A. Biery , Zheng G. Chen , Timothy J. Dalton , Naftali E. Lustig
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： DeLio & Peterson LLC
- 代理商 Robert Curcio; Lisa U. Jacklitsch
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/027 ; H01L21/20 ; H01L21/8242
摘要：
MIM capacitors and thin film resistors are fabricated with at least one less lithographic step than the prior art methods. The process step reduction is realized by using semi-transparent metallic electrodes, fabricated with a two-mask process, which provides for direct alignment, and eliminates the need for alignment trenches in an additional layer.
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