发明授权
- 专利标题： STI pull-down to control SiGe facet growth
- 专利标题（中）： STI下拉以控制SiGe面增长
-
申请号： US10665713申请日： 2003-09-19
-
公开(公告)号： US06936509B2公开(公告)日： 2005-08-30
- 发明人: Douglas Duane Coolbaugh , Mark D. Dupuis , Matthew D. Gallagher , Peter J. Geiss , Brett A. Philips
- 申请人： Douglas Duane Coolbaugh , Mark D. Dupuis , Matthew D. Gallagher , Peter J. Geiss , Brett A. Philips
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser
- 代理商 William D. Sabo, Esq.
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/20 ; H01L21/331 ; H01L29/732 ; H01L29/737 ; H01L21/8249
摘要：
A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.
公开/授权文献
- US20040063273A1 Sti pull-down to control SiGe facet growth 公开/授权日：2004-04-01
信息查询
IPC分类:
