发明授权
US06936510B2 Semiconductor device with self-aligned contact and its manufacture
有权
具有自对准触点的半导体器件及其制造
- 专利标题： Semiconductor device with self-aligned contact and its manufacture
- 专利标题（中）： 具有自对准触点的半导体器件及其制造
-
申请号： US10388454申请日： 2003-03-17
-
公开(公告)号： US06936510B2公开(公告)日： 2005-08-30
- 发明人: Kazuo Itabashi , Osamu Tsuboi , Yuji Yokoyama , Kenichi Inoue , Koichi Hashimoto , Wataru Futo
- 申请人： Kazuo Itabashi , Osamu Tsuboi , Yuji Yokoyama , Kenichi Inoue , Koichi Hashimoto , Wataru Futo
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Armstrong, Kratz, Quintos, Hanson & Brooks, LLP.
- 优先权： JP8-181057 19960710
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/60 ; H01L21/8242 ; H01L27/105 ; H01L27/108 ; H01L27/10
摘要：
A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating films, and electrically connected to the conductive plug through the second aperture.