发明授权
- 专利标题： Integration of barrier layer and seed layer
- 专利标题（中）： 势垒层和种子层的整合
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申请号： US09965373申请日： 2001-09-26
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公开(公告)号： US06936906B2公开(公告)日： 2005-08-30
- 发明人: Hua Chung , Ling Chen , Jick Yu , Mei Chang
- 申请人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Moser, Patterson & Sheridan LLP
- 主分类号： C23C14/34
- IPC分类号： C23C14/34 ; C23C16/34 ; H01L21/285 ; H01L21/768 ; H01L23/532 ; H01L23/58 ; H01L27/095
摘要：
The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper allloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.
公开/授权文献
- US20030057527A1 Integration of barrier layer and seed layer 公开/授权日：2003-03-27
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