Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US10757441Application Date: 2004-01-15
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Publication No.: US06937496B2Publication Date: 2005-08-30
- Inventor: Hiroyuki Mizuno , Takao Watanabe , Mitsuru Hiraki , Hitoshi Tanaka
- Applicant: Hiroyuki Mizuno , Takao Watanabe , Mitsuru Hiraki , Hitoshi Tanaka
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Renesas Technology Corp.,Hitachi ULSI Systems Co., Ltd.
- Current Assignee: Renesas Technology Corp.,Hitachi ULSI Systems Co., Ltd.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Mattingly, Stanger, Malur & Brundidge, P.C.
- Priority: JP11-291809 19991014
- Main IPC: G11C11/413
- IPC: G11C11/413 ; G05F1/56 ; G11C5/14 ; G11C11/407 ; H01L21/822 ; H01L27/04 ; G11C11/36

Abstract:
A semiconductor device having a first circuit block supplied with a first operating voltage, a second circuit block supplied with a second operating voltage, a voltage generating circuit for generating a third operating voltage in response to the first operating voltage, and a third circuit block supplied with the third operating voltage. Preferably, the third operating voltage is generated such that the first operating voltage is increased to a fourth operating voltage by a voltage-up converter, and then the fourth operating voltage is dropped to the third operating voltage by a voltage down-converter. Hence, a power supply operating internally stably in spite of use of a relatively fluctuating voltage can be provided even in the case where a power-supply voltage is dropped.
Public/Granted literature
- US20040145955A1 Semiconductor device Public/Granted day:2004-07-29
Information query
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