发明授权
- 专利标题： Inclusion of nitrogen at the silicon dioxide-silicon carbide interace for passivation of interface defects
- 专利标题（中）： 在二氧化硅 - 碳化硅界面处纳入氮以钝化界面缺陷
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申请号： US09818193申请日： 2001-03-26
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公开(公告)号： US06939756B1公开(公告)日： 2005-09-06
- 发明人: Gilyong Chung , Chin Che Tin , John R. Williams , Kyle McDonald , Massimiliano Di Ventra , Robert A. Weller , Sokrates T. Pantelides , Leonard C. Feldman
- 申请人： Gilyong Chung , Chin Che Tin , John R. Williams , Kyle McDonald , Massimiliano Di Ventra , Robert A. Weller , Sokrates T. Pantelides , Leonard C. Feldman
- 申请人地址： US TN Nashville US AL Auburn
- 专利权人： Vanderbilt University,Auburn University
- 当前专利权人： Vanderbilt University,Auburn University
- 当前专利权人地址： US TN Nashville US AL Auburn
- 代理机构： Morris Manning & Martin
- 代理商 Tim Tingkang Xia, Esq.
- 主分类号： H01L21/04
- IPC分类号： H01L21/04 ; H01L21/3115
摘要：
A method for manufacturing a silicon carbide semiconductor device. In one embodiment, the method includes the following steps: a layer of silicon dioxide is formed on a silicon carbide substrate to create a silicon dioxide/silicon carbide interface and then nitrogen is incorporated at the silicon dioxide/silicon carbide interface for reduction in an interface trap density. The silicon carbide substrate, in one embodiment, includes a n-type 4H-silicon carbide.
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