发明授权
US06939799B2 Method of forming a field effect transistor and methods of forming integrated circuitry
失效
形成场效应晶体管的方法和形成集成电路的方法
- 专利标题： Method of forming a field effect transistor and methods of forming integrated circuitry
- 专利标题（中）： 形成场效应晶体管的方法和形成集成电路的方法
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申请号： US10132784申请日： 2002-04-24
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公开(公告)号： US06939799B2公开(公告)日： 2005-09-06
- 发明人: Charles H. Dennison
- 申请人： Charles H. Dennison
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/768 ; H01L23/485 ; H01L29/423 ; H01L29/43 ; H01L29/49 ; H01L29/78 ; H01L21/4763
摘要：
A method of forming integrated circuitry includes forming a field effect transistor gate over a substrate. The gate comprises polysilicon conductively doped with a conductivity enhancing impurity of a first type and a conductive diffusion barrier layer to diffusion of first or second type conductivity enhancing impurity received thereover. An insulative layer is formed over the gate. An opening is formed into the insulative layer to a conductive portion of the gate. Semiconductive material conductively doped with a conductivity enhancing impurity of a second type is formed within the opening in electrical connection with the conductive portion, with the conductive diffusion barrier layer of the gate being received between the semiconductive material of the gate and the semiconductive material within the opening. Other aspects are disclosed and claimed.
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