发明授权
- 专利标题: Quantum device
- 专利标题(中): 量子设备
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申请号: US10480262申请日: 2003-03-07
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公开(公告)号: US06940087B2公开(公告)日: 2005-09-06
- 发明人: Takuya Komoda , Nobuyoshi Koshida , Tsutomu Ichihara
- 申请人: Takuya Komoda , Nobuyoshi Koshida , Tsutomu Ichihara
- 申请人地址: JP Osaka JP Tokyo
- 专利权人: Matsushita Electric Works, Ltd.,Nobuyoshi Koshida
- 当前专利权人: Matsushita Electric Works, Ltd.,Nobuyoshi Koshida
- 当前专利权人地址: JP Osaka JP Tokyo
- 代理机构: Greenblum & Bernstein, P.L.C.
- 优先权: JP2002-064287 20020308
- 国际申请: PCT/JP03/02688 WO 20030307
- 国际公布: WO03/07732 WO 20030918
- 主分类号: B82B1/00
- IPC分类号: B82B1/00 ; C09K11/59 ; H01J1/312 ; H01J9/02 ; H01L29/06 ; H01L29/66
摘要:
Disclosed is an electron source 10 including an electron source element 10a formed on the side of one surface of an insulative substrate 1. The electron source element 10a includes a lower electrode 2, a composite nanocrystal layer 6 and a surface electrode 7. The composite nanocrystal layer 6 includes a plurality of polycrystalline silicon grains 51, a thin silicon oxide film 52 formed over the surface of each of the grains 51, a number of nanocrystalline silicons 63 residing between the adjacent grains 51, and a silicon oxide film 64 formed over the surface of each of the nanocrystalline silicons 63. The silicon oxide film 64 is an insulating film having a thickness less than the crystal grain size of the nanocrystalline silicon 63. The surface electrode 7 is formed of a carbon thin film 7a laminated on the composite nanocrystal layer 6 while being in contact therewith, and a metal thin film 7b laminated on the carbon thin film 7a.
公开/授权文献
- US20040195575A1 Quantum device 公开/授权日:2004-10-07
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