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公开(公告)号：US06940087B2
公开(公告)日：2005-09-06
申请号：US10480262
申请日：2003-03-07
摘要： Disclosed is an electron source 10 including an electron source element 10a formed on the side of one surface of an insulative substrate 1. The electron source element 10a includes a lower electrode 2, a composite nanocrystal layer 6 and a surface electrode 7. The composite nanocrystal layer 6 includes a plurality of polycrystalline silicon grains 51, a thin silicon oxide film 52 formed over the surface of each of the grains 51, a number of nanocrystalline silicons 63 residing between the adjacent grains 51, and a silicon oxide film 64 formed over the surface of each of the nanocrystalline silicons 63. The silicon oxide film 64 is an insulating film having a thickness less than the crystal grain size of the nanocrystalline silicon 63. The surface electrode 7 is formed of a carbon thin film 7a laminated on the composite nanocrystal layer 6 while being in contact therewith, and a metal thin film 7b laminated on the carbon thin film 7a.
摘要翻译： 公开了一种电子源10，其包括形成在绝缘基板1的一个表面侧上的电子源元件10a。 电子源元件10a包括下电极2，复合纳米晶层6和表面电极7。 复合纳米晶层6包括多个多晶硅颗粒51，形成在每个晶粒51的表面上的薄氧化硅膜52，位于相邻晶粒51之间的多个纳米晶硅63和氧化硅膜64 形成在每个纳米晶硅63的表面上。 氧化硅膜64是具有小于纳米晶硅63的晶粒尺寸的厚度的绝缘膜。 表面电极7由层叠在复合纳米晶层6上而与其接触的碳薄膜7a和层叠在碳薄膜7a上的金属薄膜7b形成。
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2.发明授权公开(公告)号：US06794805B1
公开(公告)日：2004-09-21
申请号：US09382956
申请日：1999-08-25
申请人： Takashi Hatai , Takuya Komoda , Yoshiaki Honda , Koichi Aizawa , Yoshifumi Watabe , Tsutomu Ichihara , Yukihiro Kondo , Naomasa Oka , Nobuyoshi Koshida
发明人： Takashi Hatai , Takuya Komoda , Yoshiaki Honda , Koichi Aizawa , Yoshifumi Watabe , Tsutomu Ichihara , Yukihiro Kondo , Naomasa Oka , Nobuyoshi Koshida
IPC分类号： H01J130
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022 , H01J31/127 , H01J2201/3125
摘要： An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source 10 comprises an electrically conductive substrate of p-type silicon substrate 1; n-type regions 8 of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers 6 formed on the n-type regions 8 which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region 8; poly-silicon layers 3 between the strong field drift layers 6; surface electrodes 7 of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer 6 and the poly-silicon layers 3. By selecting a pair of the n-type regions 8 and the surface electrodes 7 and thereby making electron emitted from the crossing points due to combination of the surface electrode 7 to be electrically applied and the n-type region 8 to be electrically applied, electrons can be discharged from desired regions of the surface electrodes 7.
摘要翻译： 场发射电子源的阵列和制备阵列的方法，其从场致发射电子源的表面电极的期望区域放电。 场发射电子源10包括p型硅衬底1的导电衬底; 在p型硅衬底的一个主表面上的扩散层条纹的n型区域8，形成在由氧化的多孔多晶硅制成的n型区域8上的强电场漂移层6，用于漂移电子注入 从n型区域8; 强场漂移层6之间的多晶硅层3; 薄导电薄膜条的表面电极7以与强场漂移层6和多晶硅层3的条纹交叉的方式形成。通过选择一对n型区域8和表面电极7 从而由于要被施加的表面电极7的组合和被施加的n型区域8而使从交叉点发射的电子能够从表面电极7的期望的区域排出电子。
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公开(公告)号：US06498426B1
公开(公告)日：2002-12-24
申请号：US09557916
申请日：2000-04-21
申请人： Yoshifumi Watabe , Yukihiro Kondo , Koichi Aizawa , Takuya Komoda , Yoshiaki Honda , Takashi Hatai , Tsutomu Ichihara , Nobuyoshi Koshida
发明人： Yoshifumi Watabe , Yukihiro Kondo , Koichi Aizawa , Takuya Komoda , Yoshiaki Honda , Takashi Hatai , Tsutomu Ichihara , Nobuyoshi Koshida
IPC分类号： H01J100
摘要： A field emission-type electron source (10) is provided with a conductive substrate (1), a semiconductor layer formed on a surface of the conductive substrate (1), at least a part of the semiconductor layer being made porous, and a conductive thin film (7) formed on the semiconductor layer. Electrons injected into the conductive substrate (1) are emitted from the conductive thin film (7) through the semiconductor layer by applying a voltage between the conductive thin film (7) and the conductive substrate (1) in such a manner that the conductive thin film (7) acts as a positive electrode against the conductive substrate (1). The semiconductor layer includes a porous semiconductor layer (6) in which columnar structures (21) and porous structures (25) composed of fine semiconductor crystals of nanometer scale coexist, a surface of each of the structures being covered with an insulating film (22,24). Further, an average dimension of each of the porous structures (25) in a thickness direction of the semiconductor layer is smaller than or equal to 2 &mgr;m.
摘要翻译： 场发射型电子源（10）设置有导电基板（1），形成在导电基板（1）的表面上的半导体层，半导体层的至少一部分被制成多孔的导电基板 形成在半导体层上的薄膜（7）。 通过在导电薄膜（7）和导电性基板（1）之间施加电压，使导电性薄膜（7）的导电性薄膜（7）通过半导体层从导电性薄膜（7）射出， 膜（7）用作抵靠导电基板（1）的正电极。 半导体层包括多孔半导体层（6），其中由纳米级微细半导体晶体构成的柱状结构（21）和多孔结构（25）共存，每个结构的表面被绝缘膜（22， 24）。 此外，半导体层的厚度方向上的多孔结构体（25）的平均尺寸小于或等于2μm。
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公开(公告)号：US06791248B2
公开(公告)日：2004-09-14
申请号：US10438070
申请日：2003-05-15
IPC分类号： H01J1312
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/025 , H01J2201/3125 , Y10S977/939
摘要： There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region 161.
摘要翻译： 以低成本提供了以高稳定性和高效率发射电子的场致发射电子源及其制造方法。 在场发射电子源中，在其主表面上的n型硅衬底上形成强电场漂移部分106，并且在强电场漂移部分106上形成由金薄膜制成的表面电极107。 并且欧姆电极2形成在n型硅衬底101的背面上。在该场发射电子源110中，当表面电极107设置在真空中并且向表面电极107施加直流电压时 相对于n型硅衬底101（欧姆电极2）具有正极性，从n型硅衬底101注入的电子在强电场漂移部106中漂移，并通过表面电极107发射。 强电场漂移部106包括漂移区域161，该漂移区域161在与n型硅衬底1的厚度方向成直角的网状结构中具有横截面， 以及散热区域162，其被填充在网孔的空隙中，并且具有比漂移区域161高的导热性。
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公开(公告)号：US06590321B1
公开(公告)日：2003-07-08
申请号：US09404656
申请日：1999-09-24
IPC分类号： H01J1312
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/025 , H01J2201/3125 , Y10S977/939
摘要： In a field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids ox the mesh and has a heat conduction higher than that of the drift region 161.
摘要翻译： 在场发射电子源中，在其主表面上的n型硅衬底上形成强电场漂移部分106，并且在强电场漂移部分106上形成由金薄膜制成的表面电极107。 并且欧姆电极2形成在n型硅衬底101的背面上。在该场发射电子源110中，当表面电极107设置在真空中并且向表面电极107施加直流电压时 相对于n型硅衬底101（欧姆电极2）具有正极性，从n型硅衬底101注入的电子在强电场漂移部106中漂移，并通过表面电极107发射。 强电场漂移部分106包括漂移区域161，该漂移区域161在与n型硅衬底1的厚度方向成直角的网状结构中具有横截面，该电极是电c 以及散热区域162，其被填充在空隙中，并且具有比漂移区域161高的导热性。
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6.发明授权公开(公告)号：US06285118B1
公开(公告)日：2001-09-04
申请号：US09440166
申请日：1999-11-15
申请人： Takashi Hatai , Takuya Komoda , Yoshiaki Honda , Koichi Aizawa , Yoshifumi Watabe , Tsutomu Ichihara , Yukihiro Kondo , Nobuyoshi Koshida
发明人： Takashi Hatai , Takuya Komoda , Yoshiaki Honda , Koichi Aizawa , Yoshifumi Watabe , Tsutomu Ichihara , Yukihiro Kondo , Nobuyoshi Koshida
IPC分类号： H01J902
摘要： A field emission type electron source 10 is provided with an n-type silicon substrate 1, a strong field drift layer 6 formed on the n-type silicon substrate 1 directly or inserting a polycrystalline silicon layer 3 therebetween, and an electrically conductive thin film 7, which is a thin gold film, formed on the strong field drift layer 6. Further, an ohmic electrode 2 is provided on the back surface of the n-type silicon substrate 1. Hereupon, electrons, which are injected from the n-type silicon substrate 1 into the strong field drift layer 6, drift in the strong field drift layer 6 toward the surface of the layer, and then pass through the electrically conductive thin film 7 to be emitted outward. The strong field drift layer 6 is formed by making the polycrystalline silicon 3 formed on the n-type silicon substrate 1 porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like.
摘要翻译： 场发射型电子源10设置有n型硅衬底1，直接形成在n型硅衬底1上或在其间插入多晶硅层3的强场漂移层6和导电薄膜7 ，其是形成在强场漂移层6上的薄金膜。此外，在n型硅衬底1的背面上设置欧姆电极2.因此，从n型衬底1注入的电子 硅衬底1进入强场漂移层6，在强场漂移层6中向层的表面漂移，然后通过导电薄膜7向外发射。 通过使形成在n型硅衬底1上的多晶硅3通过阳极氧化多孔，并且使用稀硝酸等进一步氧化，形成强场漂移层6。
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7.发明授权公开(公告)号：US06249080B1
公开(公告)日：2001-06-19
申请号：US09140647
申请日：1998-08-26
申请人： Takuya Komoda , Nobuyoshi Koshida
发明人： Takuya Komoda , Nobuyoshi Koshida
IPC分类号： H01J102
摘要： A field emission electron source comprising an electrically conductive substrate, an oxidized or nitrided porous polysilicon layer formed on the surface of said electrically conductive substrate on one side thereof and having nano-structures and a thin metal film formed on said oxidized or nitrided porous polysilicon layer. Voltage is applied to said thin metal film used as a positive electrode with respect to said electrically conductive substrate thereby to emit electron beam through said thin metal film.
摘要翻译： 一种场致发射电子源，包括导电衬底，在其一面上形成在所述导电衬底的表面上并具有纳米结构的氧化或氮化的多孔多晶硅层，以及形成在所述氧化或氮化的多孔多晶硅层上的薄金属膜 。 电压被施加到相对于所述导电衬底用作正电极的所述薄金属膜上，从而通过所述薄金属膜发射电子束。
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公开(公告)号：US08653519B2
公开(公告)日：2014-02-18
申请号：US13582611
申请日：2011-03-31
申请人： Tsutomu Ichihara , Kenji Tsubaki , Masao Kubo , Nobuyoshi Koshida
发明人： Tsutomu Ichihara , Kenji Tsubaki , Masao Kubo , Nobuyoshi Koshida
IPC分类号： H01L29/04
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/312 , H01J2201/312
摘要： The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.
摘要翻译： 电子器件包括衬底，形成在衬底的表面上的第一电极，与第一电极相对的第一电极的与衬底相对的第二电极，以便面对第一电极;以及功能层，介于第一电极 和第二电极，并且通过在电解溶液中阳极氧化第一多晶半导体层而形成以包含多个半导体纳米晶体。 电子设备还包括插入在第一电极和功能层之间以与功能层紧密接触的第二多晶半导体层。 第二多晶半导体层在电解液中的阳极氧化速度低于第一多晶半导体层的阳极氧化速率，以作为仅对阳极氧化第一多晶半导体层的停止层。
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公开(公告)号：US20130032801A1
公开(公告)日：2013-02-07
申请号：US13582611
申请日：2011-03-31
申请人： Tsutomu Ichihara , Kenji Tsubaki , Masao Kubo , Nobuyoshi Koshida
发明人： Tsutomu Ichihara , Kenji Tsubaki , Masao Kubo , Nobuyoshi Koshida
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/312 , H01J2201/312
摘要： The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.
摘要翻译： 电子器件包括衬底，形成在衬底的表面上的第一电极，与第一电极相对的第一电极的与衬底相对的第二电极，以便面对第一电极;以及功能层，介于第一电极 和第二电极，并且通过在电解溶液中阳极氧化第一多晶半导体层而形成以包含多个半导体纳米晶体。 电子设备还包括插入在第一电极和功能层之间以与功能层紧密接触的第二多晶半导体层。 第二多晶半导体层在电解液中的阳极氧化速度低于第一多晶半导体层的阳极氧化速率，以作为仅对阳极氧化第一多晶半导体层的停止层。
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10.发明授权公开(公告)号：US07306990B2
公开(公告)日：2007-12-11
申请号：US10535941
申请日：2003-11-28
申请人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
发明人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
IPC分类号： H01L21/336 , H01L21/00 , H01L29/788 , H01L21/3205 , H01L21/4763 , H01L29/76
CPC分类号： H01L29/7881 , G11C23/00
摘要： An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).
摘要翻译： 一种能够通过机械操作读取和写入信息的信息存储装置，其中栅极绝缘膜具有空腔（6）和在空腔中具有两个稳定偏转状态的浮动栅层（5） 6），通过偏转晶体管的沟道侧稳定状态，并且通过偏向栅极（7）而稳定的状态，可以通过改变浮动栅极层（5）的稳定偏转状态来进行信息的写入和读取 ）通过积存在浮动栅极层（5）中的电子（或正空穴8）与外部电场之间的库仑相互作用力，并且基于浮动栅极层（5）的状态读取沟道电流变化。
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