发明授权
- 专利标题： Storage capacitor having a scattering effect and method of manufacturing the same
- 专利标题（中）： 具有散射效应的储能电容器及其制造方法
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申请号： US10711018申请日： 2004-08-18
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公开(公告)号： US06940709B2公开(公告)日： 2005-09-06
- 发明人: Hung-Huei Hsu
- 申请人： Hung-Huei Hsu
- 申请人地址： TW Hsin-Chu
- 专利权人： m-Display Optronics Corp.
- 当前专利权人： m-Display Optronics Corp.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： TW92137231A 20031226
- 主分类号： G02F1/1368
- IPC分类号： G02F1/1368 ; G02F1/136 ; G02F1/1362 ; H01G4/008 ; H01L21/77 ; H01L21/8242 ; H01L27/12 ; H01L27/13
摘要：
A storage capacitor having a scattering effect is positioned in a substrate for use in a thin film transistor array loop. The storage capacitor is characterized by having a rough layer overlapped by a medium layer and a passivation layer. The storage capacitor further has a reflective layer with high reflectivity so as to provide the storage capacitor with the scattering effect toward an external light source. A method of manufacturing the storage capacitor by two photolithography processes is also shown.
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