发明授权
- 专利标题: Multilayered chip capacitor
- 专利标题(中): 多层片式电容器
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申请号: US11029677申请日: 2005-01-06
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公开(公告)号: US06940710B1公开(公告)日: 2005-09-06
- 发明人: Byoung Hwa Lee , Dong Seok Park , Chang Hoon Shim , Sang Soo Park , Min Cheol Park
- 申请人: Byoung Hwa Lee , Dong Seok Park , Chang Hoon Shim , Sang Soo Park , Min Cheol Park
- 申请人地址: KR Kyungki-Do
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Kyungki-Do
- 代理机构: Lowe Hauptman & Berner, LLP
- 优先权: KR10-2004-0071615 20040908
- 主分类号: H01G4/232
- IPC分类号: H01G4/232 ; H01G4/30 ; H01G4/06
摘要:
A multilayered chip capacitor including a capacitor main body including a plurality of dielectric layers, which are laminated; at least one pair of first and second internal electrodes, each of which is formed on the corresponding one of the plural dielectric layers and includes at least one lead extended to one end of the corresponding dielectric layer; a plurality of external terminals formed on the outer surface of the capacitor main body, and respectively connected to the first and second internal electrodes through the leads; and at least one opened region, formed through the inner area of each of the first and second internal electrodes, for branching the flow of current so as to increase the offset quantity of parasitic inductances between the first and second internal electrodes.
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