公开(公告)号：USD562216S1

公开(公告)日：2008-02-19

申请号：US29264442

申请日：2006-08-10

申请人： Se-Heon Park

设计人： Se-Heon Park

公开(公告)号：US07276930B2

公开(公告)日：2007-10-02

申请号：US11019395

申请日：2004-12-23

申请人： Hwang Hur ,  Jun-Gi Choi

发明人： Hwang Hur ,  Jun-Gi Choi

IPC分类号： G01R31/26

CPC分类号： G11C29/50 ,  G11C29/12005 ,  G11C2029/5002

摘要： A circuit and method for easily detecting skew of a transistor within a semiconductor device are provided. The circuit for detecting the skew of the transistor includes a linear voltage generating unit for outputting a linear voltage by using a first supply voltage, a first attenuation unit for reducing variation width of the linear voltage according to the performance of the transistor, a saturation voltage generating unit for outputting a saturation voltage by using a second supply voltage, and a comparison unit for comparing an output of the first attenuation unit and the saturation voltage.

摘要翻译： 提供一种用于容易地检测半导体器件内的晶体管的偏斜的电路和方法。 用于检测晶体管的偏斜的电路包括用于通过使用第一电源电压输出线性电压的线性电压产生单元，用于根据晶体管的性能减小线性电压的变化幅度的第一衰减单元，饱和电压 产生单元，用于通过使用第二电源电压输出饱和电压;以及比较单元，用于比较第一衰减单元的输出和饱和电压。

公开(公告)号：US07271091B2

公开(公告)日：2007-09-18

申请号：US11024467

申请日：2004-12-30

申请人： Date-Gun Lee

发明人： Date-Gun Lee

IPC分类号： H01L21/4763

CPC分类号： H01L23/485 ,  H01L21/76804 ,  H01L21/76838 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a metal pattern in a semiconductor device which is capable of reducing contact resistivity with an interconnection contact. The method includes forming a tungsten interconnection contact passing through a lower insulating layer on a semiconductor substrate, forming an upper insulating layer covering the interconnection contact, and forming a groove having the same line width as a damascene trench on the upper insulating layer. The method also includes forming a mask spacer on a sidewall of the groove, forming the damascene trench having an inclined bottom profile for exposing a top surface and a portion of a sidewall of the interconnection contact, and forming a metal pattern with which the damascene trench is filled, the metal pattern electrically connected to the interconnection contact.

摘要翻译： 一种在能够降低与互连接点的接触电阻率的半导体器件中形成金属图案的方法。 该方法包括形成通过半导体衬底上的下绝缘层的钨互连接触，形成覆盖互连接触的上绝缘层，并在上绝缘层上形成具有与镶嵌沟槽相同的线宽的沟槽。 该方法还包括在槽的侧壁上形成掩模间隔物，形成具有倾斜底部轮廓的镶嵌槽，用于暴露互连接触件的顶表面和侧壁的一部分，并形成金属图案，通过该金属图案，镶嵌槽 被填充，金属图形电连接到互连触点。

公开(公告)号：US07264987B2

公开(公告)日：2007-09-04

申请号：US11012699

申请日：2004-12-16

申请人： Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Eui Hong ,  Kyoung Ik Cho

发明人： Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Eui Hong ,  Kyoung Ik Cho

IPC分类号： H01L21/00

CPC分类号： H01L29/66318 ,  H01L31/109 ,  H01L31/1105

摘要： Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

摘要翻译： 提供一种制造光电集成电路芯片的方法。 特别地，提供了一种制造光电集成电路芯片的方法，其中通过使用选择区域，波导型光学检测器的光吸收层生长成比异质结双极晶体管的集电极层厚 通过金属有机化学气相沉积（MOCVD）方法的生长，波导型光检测器和异质结双极晶体管作为单芯片集成在半绝缘InP衬底上，从而容易实现波导型光 检测器提高了量子效率并具有超高速特性。

公开(公告)号：US07263118B2

公开(公告)日：2007-08-28

申请号：US10331783

申请日：2002-12-31

申请人： In-Kyeong Choi ,  Seong-Rag Kim ,  Jin-Kyu Choi

发明人： In-Kyeong Choi ,  Seong-Rag Kim ,  Jin-Kyu Choi

IPC分类号： H04L27/30

CPC分类号： H04B1/71075 ,  H04B1/71072 ,  H04B1/7117 ,  H04B1/712 ,  H04B17/336

摘要： An interference canceller is herein disclosed wherein a baseband signal is input to a detector's fingers, and the fingers detect multi-path signals and estimate the baseband signal's channel. An MRC uses the finger's despread signal and the channel estimate to output a soft bit decision value, while a signal regenerator uses a hard bit decision value and the finger's channel estimate to regenerate the baseband signal. An SIR measurer uses a soft bit decision value and a despreader's channel estimate to measure an SIR. A signal selector compares each detector's SIR measurement value with a target SIR, and when the SIR measurement value is greater than the target SIR, it selects the detector's regeneration signal to group received signals. A subtractor subtracts the regeneration signal from the baseband signal.

摘要翻译： 这里公开了一种干扰消除器，其中将基带信号输入到检测器的手指，并且手指检测多路径信号并估计基带信号的信道。 MRC使用手指的解扩信号和信道估计来输出软比特判定值，而信号再生器使用硬比特判定值和手指的信道估计来重新生成基带信号。 SIR测量器使用软比特判定值和解扩器的信道估计来测量SIR。 信号选择器将每个检测器的SIR测量值与目标SIR进行比较，并且当SIR测量值大于目标SIR时，它选择检测器的再生信号以对接收到的信号进行分组。 减法器从基带信号中减去再生信号。

公开(公告)号：US07262669B2

公开(公告)日：2007-08-28

申请号：US11158344

申请日：2005-06-22

申请人： Jin Hee Cho

发明人： Jin Hee Cho

IPC分类号： H03L7/85

CPC分类号： G11C29/12015 ,  G11C11/401 ,  G11C11/406 ,  G11C11/40626 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50016 ,  G11C2211/4061

摘要： The present invention relates to a circuit for controlling a refresh oscillator, and more specifically, to a circuit for controlling a refresh oscillator, wherein refresh characteristics can be tested in a more efficient manner in such a manner that the refresh characteristics are tested at a refresh cycle, which is extended as long as a predetermined time from an originally set refresh cycle, in a user test mode so as to measure a refresh margin over a wide temperature range.

摘要翻译： 本发明涉及一种用于控制刷新振荡器的电路，更具体地说，涉及一种用于控制刷新振荡器的电路，其中可以以更有效的方式测试刷新特性，使得刷新特性在刷新时被测试 循环，其在用户测试模式中从原始设置的刷新周期延长预定时间，以便在宽的温度范围内测量刷新余量。

公开(公告)号：US07262097B2

公开(公告)日：2007-08-28

申请号：US11320592

申请日：2005-12-30

申请人： Heong Jin Kim

发明人： Heong Jin Kim

IPC分类号： H01L21/8247

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： A method for fabricating a nonvolatile memory device including successively forming a first oxide layer, an electrically conductive layer, a second oxide layer, a nitride layer and a third oxide layer on a semiconductor substrate. The method also includes patterning the third oxide layer, forming spacers at sidewalls of the third oxide layer, forming a trench in the substrate by selectively etching the substrate with the third oxide layer as a mask, filling the trench with fourth oxide layer, and removing the third oxide layer, the nitride layer and the second oxide layer. Before filling the trench with the fourth oxide layer, a liner oxide layer is formed on inner walls of the trench. The fourth oxide layer is high density plasma (HDP) oxide and tetrafluoroethane (Si(OC2H5)4). During the filling the trench, lower corners of the conductive layer are made have rounded structure or bird's beak structure.

公开(公告)号：US07259717B2

公开(公告)日：2007-08-21

申请号：US10534968

申请日：2003-03-07

申请人： René Gounon

发明人： René Gounon

IPC分类号： G01S5/14

CPC分类号： G01S19/32 ,  G01S19/41

摘要： The invention relates to a method for determining the relative position of a mobile in relation to the known position of a reference station. The relative position calculation comprises the steps of: -a) choosing a linear combination of satellite transmission frequencies L1 and L2 from a predetermined list comprising at least two linear combinations of frequencies, -b) calculating a precise relative position Pp of the mobile in relation to the reference station on the basis of the linear combinations of pseudo-ranges corresponding to the linear combination and an estimated position Pe of the mobile in relation to the reference station, -c) choosing from the list the following linear combination, if it exists, and, in this case, reiterating step b), considering the estimated position to be said precise position Pp, -d) reiterating step c) for all the linear combinations in the list.

摘要翻译： 本发明涉及一种用于确定移动台相对于参考站的已知位置的相对位置的方法。 相对位置计算包括以下步骤：a）从包括频率的至少两个线性组合的预定列表中选择卫星传输频率L 1和L 2的线性组合，-b）计算移动台的精确相对位置Pp 基于与线性组合相对应的伪范围的线性组合和移动站相对于参考站的估计位置Pe相对于参考站，-c）从列表中选择以下线性组合，如果 并且在这种情况下，重复步骤b），考虑估计的位置为所述精确位置Pp，-d）重复步骤c）对列表中的所有线性组合。

公开(公告)号：US07257636B2

公开(公告)日：2007-08-14

申请号：US10291430

申请日：2002-11-12

申请人： Byung Gil Lee ,  Hyun Gon Kim ,  Chee Hang Park

发明人： Byung Gil Lee ,  Hyun Gon Kim ,  Chee Hang Park

IPC分类号： G06F15/16

CPC分类号： H04L63/0272 ,  H04L63/0442 ,  H04L63/0869 ,  H04L63/0892 ,  H04L67/04 ,  H04W80/00 ,  H04W80/04 ,  Y10S707/99942 ,  Y10S707/99943 ,  Y10S707/99944

摘要： In the inter-working method of wireless Internet (gateways) according to the present invention described above, DIAMETER which is the first version of the IETF-RFC standard of mobile IP application is applied to the application scenario based on wireless Internet gateway of a home network, not on FA or HA of Mobile IP. After all mobile communication providers connect to wireless Internet, subscribers are not bounded to the network of their mobile communication provider and have the freedom to select any external wireless Internet portal site and use the service of it. Such a wireless Internet connection method will make wireless Internet contents popular in the open wireless network epoch and provide wireless Internet contents providers with an excellent chance. The authentication of the wireless Internet gateways of other networks, authorization, accounting management, structures and techniques proposed by the present invention can give solutions to security problems of wireless internet gateway (ex WAP G/W) that have not overcome, and provide reliability to wireless Internet electronic commercial trade service.

摘要翻译： 在上述根据本发明的无线因特网（网关）的互通方式中，作为移动IP应用的IETF-RFC标准的第一版本的DIAMETER被应用于基于家庭的无线因特网网关的应用场景 网络，不在移动IP的FA或HA上。 在所有移动通信提供商连接到无线互联网之后，用户不限于其移动通信提供商的网络，并且可以自由地选择任何外部无线因特网门户网站并使用其服务。 这种无线互联网连接方式将使无线互联网内容在开放的无线网络时代流行，为无线互联网内容提供商提供了极好的机会。 本发明提出的其他网络的无线互联网网关的认证，授权，会计管理，结构和技术，可以解决未能克服的无线网关（例如WAP G / W）的安全问题，提供可靠性 无线互联网电子商务贸易服务。

公开(公告)号：US07255688B2

公开(公告)日：2007-08-14

申请号：US11135367

申请日：2005-05-24

申请人： Toru Sasaki ,  Yoshio Ono ,  Satoru Sakaguchi ,  Tomoko Sugito

发明人： Toru Sasaki ,  Yoshio Ono ,  Satoru Sakaguchi ,  Tomoko Sugito

IPC分类号： A61F13/15

CPC分类号： A61F13/496 ,  A61F13/49011

摘要： A pull-on disposable wearing article has a first waist region and a second waist region. The first waist region is elastically stretch- and contractible in the transverse direction. The second waist region is formed with a pair of finger-grip zones which are non-stretchable in the transverse direction and an elastically stretch- and contractible middle zone. The finger-grip zones respectively have a dimension in a range of 10 to 100 mm as measured in the transverse direction and extend from a peripheral edge of the waist-hole to peripheral edges of the respective leg-holes, along a pair of bonded zones where transversely opposite side edges of the waist regions are bonded together. The middle zone extends between the finger-grip zones is elastically stretch- and contractible in the transverse direction.

摘要翻译： 一次性穿戴用品，具有第一腰围区域和第二腰围区域。 第一腰围区域在横向弹性伸缩。 第二腰部区域形成有在横向上不可拉伸的一对手指抓握区域和弹性伸缩收缩中间区域。 手指握持区分别具有在横向测量的10至100mm范围内的尺寸，并且沿着一对接合区域从腰部孔的周缘延伸到各个腿孔的周边边缘 其中腰部区域的横向相对的侧边缘粘结在一起。 手指区域之间延伸的中间区域在横向方向上弹性拉伸和收缩。