发明授权
US06941494B1 Built-in test for multiple memory circuits 有权
内置多个内存测试电路

Built-in test for multiple memory circuits
摘要:
A memory test circuit includes a collar for coupling to a memory device for switching an address bus and a data bus of the memory device between an external circuit and the collar in response to a switching signal; and a controller coupled to the collar for generating the switching signal, a test vector, and control signals between the controller and the collar on as few as seven control lines for testing the memory device with the test vector. Multiple memory devices of various sizes may be tested with the same controller concurrently.
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