发明授权
- 专利标题: Built-in test for multiple memory circuits
- 专利标题(中): 内置多个内存测试电路
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申请号: US10027311申请日: 2001-12-21
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公开(公告)号: US06941494B1公开(公告)日: 2005-09-06
- 发明人: Alexander E. Andreev , Igor A. Vikhliantsev , Lav D. Ivanovic
- 申请人: Alexander E. Andreev , Igor A. Vikhliantsev , Lav D. Ivanovic
- 申请人地址: US CA Milpitas
- 专利权人: LSI Logic Corporation
- 当前专利权人: LSI Logic Corporation
- 当前专利权人地址: US CA Milpitas
- 代理机构: Fitch, Even, Tabin & Flannery
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G11C29/26
摘要:
A memory test circuit includes a collar for coupling to a memory device for switching an address bus and a data bus of the memory device between an external circuit and the collar in response to a switching signal; and a controller coupled to the collar for generating the switching signal, a test vector, and control signals between the controller and the collar on as few as seven control lines for testing the memory device with the test vector. Multiple memory devices of various sizes may be tested with the same controller concurrently.
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