发明授权
- 专利标题: Integration scheme for metal gap fill, with fixed abrasive CMP
- 专利标题(中): 金属间隙填充的集成方案,固定磨料CMP
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申请号: US10084194申请日: 2002-02-28
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公开(公告)号: US06943114B2公开(公告)日: 2005-09-13
- 发明人: Peter Wrschka , Werner Robl , Thomas Goebel
- 申请人: Peter Wrschka , Werner Robl , Thomas Goebel
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/3105
- IPC分类号: H01L21/3105 ; H01L21/302 ; H01L21/461
摘要:
In a method of planarizing a semiconductor wafer, the improvement comprising polishing above metal interconnect lines to uniformly polish the topography of the wafer to a predetermined endpoint on the wafer sufficiently close above the metal interconnect lines, yet far enough away from the lines to prevent damage to the lines, comprising:a) filling gaps between metal interconnect lines of an inter metal dielectric in a wafer being formed, by depositing HDP fill on top of the metal interconnects, between the metal interconnects, and on the surface of a dielectric layer between the metal interconnects to create an HDP overfill;b) contacting the surface of HDP overfill of the processed semiconductor wafer from step a) with a fixed abrasive polishing pad; andc) relatively moving the wafer and the fixed abrasive polishing pad to affect a polishing rate sufficient to reach a predetermined endpoint and uniformly planar surface on the wafer sufficiently close above the metal interconnect lines and yet far enough away from the lines to prevent damage to the lines.