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    Integration scheme for metal gap fill, with fixed abrasive CMP
    1.
    发明授权
    Integration scheme for metal gap fill, with fixed abrasive CMP 有权
    金属间隙填充的集成方案，固定磨料CMP

    公开(公告)号：US06943114B2

    公开(公告)日：2005-09-13

    申请号：US10084194

    申请日：2002-02-28

    申请人： Peter Wrschka ,  Werner Robl ,  Thomas Goebel

    发明人： Peter Wrschka ,  Werner Robl ,  Thomas Goebel

    IPC分类号： H01L21/3105 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31053 ,  Y10S438/959

    摘要： In a method of planarizing a semiconductor wafer, the improvement comprising polishing above metal interconnect lines to uniformly polish the topography of the wafer to a predetermined endpoint on the wafer sufficiently close above the metal interconnect lines, yet far enough away from the lines to prevent damage to the lines, comprising:a) filling gaps between metal interconnect lines of an inter metal dielectric in a wafer being formed, by depositing HDP fill on top of the metal interconnects, between the metal interconnects, and on the surface of a dielectric layer between the metal interconnects to create an HDP overfill;b) contacting the surface of HDP overfill of the processed semiconductor wafer from step a) with a fixed abrasive polishing pad; andc) relatively moving the wafer and the fixed abrasive polishing pad to affect a polishing rate sufficient to reach a predetermined endpoint and uniformly planar surface on the wafer sufficiently close above the metal interconnect lines and yet far enough away from the lines to prevent damage to the lines.

    摘要翻译： 在平坦化半导体晶片的方法中，改进包括在金属互连线上方抛光，以将晶片的形貌均匀地抛光到晶片上的预定端点上，该晶圆足够靠近金属互连线上方，远离线路远离线以防止损坏 包括：a）通过在金属互连件的顶部，金属互连件之间以及电介质层的表面上沉积HDP填充物，填充在形成的晶片之间的金属互连线之间的间隙， 金属互连以产生HDP溢出; b）使来自步骤a）的经处理的半导体晶片的HDP的填充表面与固定的研磨抛光垫接触; 以及c）相对移动所述晶片和所述固定研磨抛光垫以影响足以达到所述晶片上的预定端点和所述晶片上的均匀平坦表面的抛光速率，所述平坦表面足够靠近所述金属互连线，并且远离所述线远离所述线，以防止损坏 线条。

    SYSTEMS AND METHODS FOR DELIVERY OF FLUID-CONTAINING PROCESS MATERIAL COMBINATIONS
    3.
    发明申请
    SYSTEMS AND METHODS FOR DELIVERY OF FLUID-CONTAINING PROCESS MATERIAL COMBINATIONS 失效
    用于输送含流体过程材料组合的系统和方法

    公开(公告)号：US20110008964A1

    公开(公告)日：2011-01-13

    申请号：US12745748

    申请日：2008-12-08

    申请人： John E.Q. Hughes ,  Donald D. Ware ,  Steven M. Lurcott ,  Peter Wrschka

    发明人： John E.Q. Hughes ,  Donald D. Ware ,  Steven M. Lurcott ,  Peter Wrschka

    IPC分类号： H01L21/306 ,  F15D1/00 ,  B67D7/00

    CPC分类号： H01L21/3212 ,  B24B57/02 ,  H01L21/6715 ,  Y10T137/2499 ,  Y10T137/4807 ,  Y10T137/8593

    摘要： Common sources of different (e.g., concentrated) process materials are controllably supplied to multiple blending manifolds associated with multiple process tools, processing stations, or other points of use, to create an independently controllable process material blend for each tool, station, or point of use. Multi-constituent process materials may be circulated from a supply container through a blending manifold to a return container to ensure homogeneity until immediately prior to blending and use. Such containers may include liner-based containers adapted for pressure dispensation.

    摘要翻译： 不同（例如，浓缩）工艺材料的常见来源可控地供应到与多个工艺工具，加工站或其他使用点相关联的多个混合歧管，以创建用于每个工具，工位或点的 使用。 多组分加工材料可以从供应容器通过混合歧管循环到返回容器，以确保在混合和使用之前的均匀性。 这种容器可以包括适于压力分配的基于衬垫的容器。

    High throughput chemical mechanical polishing composition for metal film planarization
    5.
    发明授权
    High throughput chemical mechanical polishing composition for metal film planarization 失效
    用于金属膜平面化的高通量化学机械抛光组合物

    公开(公告)号：US08304344B2

    公开(公告)日：2012-11-06

    申请号：US12026414

    申请日：2008-02-05

    申请人： Karl E. Boggs ,  Michael S. Darsillo ,  Peter Wrschka ,  James Welch

    发明人： Karl E. Boggs ,  Michael S. Darsillo ,  Peter Wrschka ,  James Welch

    IPC分类号： H01L21/302

    CPC分类号： C09G1/02 ,  B24B37/044 ,  H01L21/3212

    摘要： A chemical mechanical polishing process including a single copper removal CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.

    摘要翻译： 化学机械抛光方法，其包括用于平坦化微电子器件结构的单一铜去除CMP浆料制剂，优选在其上沉积铜。 该方法包括使用具有氧化剂，钝化剂，研磨剂和溶剂的第一CMP浆料制剂以及使用包括第一CMP浆料配方的制剂对微电子器件结构进行软抛光和过度抛光的铜层的大量去除， 至少一种附加添加剂。 本文所述的CMP方法提供了高的铜去除速率，较低的屏障材料去除速率，适当的材料选择性范围，以使阻挡材料暴露开始时的铜凹陷最小化以及良好的平坦化效率。

    Systems and methods for delivery of fluid-containing process material combinations
    9.
    发明授权
    Systems and methods for delivery of fluid-containing process material combinations 失效
    用于输送含流体的工艺材料组合的系统和方法

    公开(公告)号：US08507382B2

    公开(公告)日：2013-08-13

    申请号：US12745748

    申请日：2008-12-08

    申请人： John E. Q. Hughes ,  Donald D. Ware ,  Steven M. Lurcott ,  Peter Wrschka

    发明人： John E. Q. Hughes ,  Donald D. Ware ,  Steven M. Lurcott ,  Peter Wrschka

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3212 ,  B24B57/02 ,  H01L21/6715 ,  Y10T137/2499 ,  Y10T137/4807 ,  Y10T137/8593

    摘要： Common sources of different (e.g., concentrated) process materials are controllably supplied to multiple blending manifolds associated with multiple process tools, processing stations, or other points of use, to create an independently controllable process material blend for each tool, station, or point of use. Multi-constituent process materials may be circulated from a supply container through a blending manifold to a return container to ensure homogeneity until immediately prior to blending and use. Such containers may include liner-based containers adapted for pressure dispensation.

    摘要翻译： 不同（例如，浓缩）工艺材料的常见来源可控地供应到与多个工艺工具，加工站或其他使用点相关联的多个混合歧管，以创建用于每个工具，工位或点的 使用。 多组分加工材料可以从供应容器通过混合歧管循环到返回容器，以确保在混合和使用之前的均匀性。 这种容器可以包括适于压力分配的基于衬垫的容器。