发明授权
US06944199B2 Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser
有权
具有横向电流传导的半导体激光器和用于制造半导体激光器的方法
- 专利标题： Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser
- 专利标题（中）： 具有横向电流传导的半导体激光器和用于制造半导体激光器的方法
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申请号： US10460823申请日： 2003-06-12
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公开(公告)号： US06944199B2公开(公告)日： 2005-09-13
- 发明人: Bruno Acklin , Martin Behringer , Karl Ebeling , Christian Hanke , Jörg Heerlein , Lutz Korte , Johann Luft , Karl-Heinz Schlereth , Werner Späth , Zeljko Spika
- 申请人： Bruno Acklin , Martin Behringer , Karl Ebeling , Christian Hanke , Jörg Heerlein , Lutz Korte , Johann Luft , Karl-Heinz Schlereth , Werner Späth , Zeljko Spika
- 申请人地址： DE Munich
- 专利权人： Osram GmbH
- 当前专利权人： Osram GmbH
- 当前专利权人地址： DE Munich
- 代理商 Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- 优先权： DE10061701 20001212
- 主分类号： H01S5/042
- IPC分类号： H01S5/042 ; H01S5/16 ; H01S5/227 ; H01S5/00
摘要：
A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.
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