Invention Grant
- Patent Title: Charged particle beam exposure method and apparatus and device manufacturing method using the apparatus
- Patent Title (中): 带电粒子束曝光方法及装置及装置的制造方法
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Application No.: US10909300Application Date: 2004-08-03
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Publication No.: US06946665B2Publication Date: 2005-09-20
- Inventor: Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
- Applicant: Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Canon Kabushiki Kaisha,Hitachi High-Technologies Corporation
- Current Assignee: Canon Kabushiki Kaisha,Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2003-206223 20030806
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H01J37/04 ; H01J37/304 ; H01J37/305 ; H01J37/317 ; H01L21/027 ; H01J3/07 ; H01J3/14
Abstract:
A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams includes a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams. A second measurement member makes the plurality of charged particle beams come incident and multiplies electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.
Public/Granted literature
- US20050029473A1 Charged particle beam exposure method and apparatus and device manufacturing method using the apparatus Public/Granted day:2005-02-10
Information query
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