摘要:
A therapeutic patch for treating pain capable of compressing a tender area up to a boundary thereof and/or an entire induration with metallic grains or crushed stones by a treatment method in accordance with a classification determined after clarifying a site of pain by pressing a skin with a pressing bar or fingers (first to fourth fingers) to classify the cause of pain, thereby finding the presence of a geographical tender area and/or the presence of an induration on a skin as the cause of pain.
摘要:
The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.
摘要:
Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.
摘要:
A blanking array is used for controlling an electron beam in an electron beam writing system. Electrodes in the array are formed in parallel and two sets of the parallel electrodes, orthogonal to one another, are used for dividing the electron beam into a plurality of individual exposure areas. The sets of parallel electrodes can be formed in one array by a wire mesh or in two separate arrays spaced closely together or farther apart at different focal point positions. The electrodes are provided to extend across an aperture, such as a square or triangular aperture. For a triangular aperture, the electrodes are made parallel to the hypotenuse of the triangle. The writing patterns are formed by combining the exposure areas. Control of each exposure area is realized by applying opposite polarity voltage to adjacent electrodes in order to deflect the portion of the beam passing between the adjacent electrodes. The deflected beam portions are blocked by a downstream aperture that permits the non-deflected electron beam portions to pass through for forming the patterns to be written.
摘要:
A lithography apparatus in which a charged particle ray such as an electron beam or an ion beam is controlled to scan a desired region of a sample and thereby draw a pattern, including a framing pattern memory for storing therein closed framing lines of a pattern to be drawn in the form of dot images, a framing pattern generator for writing the framing lines of the pattern to be drawn into said framing pattern memory in the form of dot images, and a raster scanning circuit for scanning the framing pattern memory having stored therein closed framing lines of the pattern to be drawn and for generating a beam deflection address for drawing the pattern and a beam blanking control signal.
摘要:
An apparatus for electron beam lithography comprises at least one mask equipped with a polygonal aperture to be subjected to an electron beam from an electron beam generator, an electron lens system for demagnifying and imaging the polygonal aperture of the mask, and a solenoid coil for electron beam rotation adjustment placed between the mask and the final-stage electron lens.
摘要:
The present invention provides a therapeutic patch for treating pain capable of compressing a tender area up to a boundary thereof and/or an entire induration with metallic grains or crushed stones by a treatment method in accordance with a classification determined after clarifying a site of pain by pressing a skin with a pressing bar or fingers (first to fourth fingers) to classify the cause of pain, thereby finding the presence of a geographical tender area and/or the presence of an induration on a skin as the cause of pain.
摘要:
A polymerizate slurry obtained through a reaction of an alkali sulfide source and an aromatic dihalide compound in an organic polar solvent and comprising polyarylene sulfide particles, a by-produced alkali metal salt and the polar organic solvent, is continuously contacted countercurrently with a washing liquid, thereby continuously and efficiently recovering washed polyarylene sulfide particles. Furthermore, the by-produced alkali metal salt is removed, and the polar organic solvent is recovered, efficiently.
摘要:
A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams comprises a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams, and a second measurement member for making the plurality of charged particle beams come incident and multiplying electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.
摘要:
An electron beam lithography apparatus of the present invention prevents the electron beam trajectory from being affected by a leakage magnetic field from a permanent magnet which is used as a sample stage guide/driving mechanism. In this electron beam lithography apparatus, an air bearing guide is used as a sample stage guide mechanism, and the stage posture is held by attracting the stage floating on a surface plate to the surface plate side by the permanent magnet. To avoid the leakage magnetic field from the permanent magnet from affecting the electron beam irradiation position on the sample, the permanent magnet is magnetically shielded by a shield member. In addition, to reduce variations in magnetic field above the sample, which are generated when the shield member moves in a leakage magnetic field from the electron lens, another shield member is arranged under the electron lens.